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BFG541, BFG541115, BFG55

Table of contents:
Info of BFG541
Info of BFG541115
Info of BFG55

BFG541, BFG541115, BFG55 Selling Leads, Datasheet

MFG:NXP Package Cooled:2009+ROHS D/C:19600

BFG541, BFG541115, BFG55 Datasheet download

Five Points

Part Number: BFG541

MFG: NXP

Package Cooled: 2009+ROHS

D/C: 19600

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BFG541 General Description

NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

The transistors are mounted in a plastic SOT223 envelope.

BFG541 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	-	20	V
V_CES	collector-emitter voltage	R_BE = 0	-	-	15	V
I_C	DC collector current		-	-	120	mA
P_tot	total power dissipation	T_s 60 °C; note 1	-	-	650	mW
h_FE	DC current gain	I_C = 40 mA; V_CE = 8 V; T_j= 25 °C	100	120	250
C_re	feedback capacitance	I_C = 0; V_CE = 8 V; f = 1 MHz	-	0.7	-	pF
f_T	transition frequency	I_C = 40 mA; V_CE = 8 V; f = 1 GHz; T_amb = 25 °C	-	9	-	GHz
G_UM	maximum unilateral power gain	I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C	-	15	-	dB
G_UM	maximum unilateral power gain	I_C = 40 mA; V_CE = 8 V; f = 2 GHz; T_amb = 25 °C	-	9	-	dB
\|s21\|²	insertion power gain	I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb= 25 °C	15	14	-	dB
F	noise figure	G_s = Gopt; I_C = 10 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C	-	1.3	1.8	dB
P_L1	output power at 1 dB gain compression	I_C = 40 mA; V_CE = 8 V; R_L = 50 ; f = 900 MHz; T_amb = 25 °C	-	21	-	dB
ITO	third order intercept point	I_C = 40 mA; V_CE= 8 V; R_L = 50 ; f = 900 MHz; T_amb = 25 °C	-	34	-	dB

BFG541 Features

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.

BFG541 Connection Diagram

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