BFG520/X215, BFG520/XR, BFG520215 Selling Leads, Datasheet
MFG:NXP Package Cooled:HK Stock D/C:0
BFG520/X215, BFG520/XR, BFG520215 Datasheet download
Part Number: BFG520/X215
MFG: NXP
Package Cooled: HK Stock
D/C: 0
BFG520/X215, BFG520/XR, BFG520215
- Table of contents:
Info of BFG520/X215
Info of BFG520/XR
Info of BFG520215
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About BFG10
PDF/DataSheet Download
Datasheet: BFG10
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFG520/XR
PDF/DataSheet Download
Datasheet: BFG520/XR
File Size: 149660 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFG10
PDF/DataSheet Download
Datasheet: BFG10
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BFG520/XR General Description
NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.
The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.
BFG520/XR Maximum Ratings
In accordance with the Absolute Maximum System (IEC 134).
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
v |
| VCEO | collector-emitter voltage |
open base |
- |
15 |
v |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
v |
| IC | DC collector current |
- |
70 |
mA | |
| Ptot | total power dissipation |
up to Ts = 88 °C; note 1 |
- |
300 |
mW |
| Tstg | storage temperature |
-65 |
150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
BFG520/XR Features
· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.
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