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BFG424F, BFG425, BFG425W

Table of contents:
Info of BFG424F
Info of BFG425
Info of BFG425W

BFG424F, BFG425, BFG425W Selling Leads, Datasheet

MFG:NXP Package Cooled:SOT343 D/C:09+

BFG424F, BFG425, BFG425W Datasheet download

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Part Number: BFG424F

MFG: NXP

Package Cooled: SOT343

D/C: 09+

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BFG424F General Description

The BFG424F is a type of NPN 25 GHP wideband transistor. They package is NPN double polysilicon wideband transi stor with buried layer for low voltage applications.

Features of the BFG424F are:(1) very high power gain; (2) low oise figure; (3) high trasitio frequecy; (4) emitter is th ermal lead; (5) low feedback capacitace.

The quick reference data and characteristics of the BFG424F can be summarized as:(1):DC current gain is 50 min, 80 typ and 120 max(IC = 25 mA; VCE = 2 V;Tj = 25 °C);(2):collector-base capacitance is 102fF when VCB is 2 V and f is 1 MHz;(3):transition frequency is 25GHz(IC = 25 mA; VCE = 2 V;f = 2 GHz; Tamb = 25 °C);(4):maximum power ga in is 23dB typ(IC = 25 mA; VCE = 2 V;f = 2 GHz; Tamb = 25 °C); (5):noise figure is 1.2dB typ(IC = 2 mA; VCE = 2 V;f = 2 GHz; TS = Gopt.Characteristics:(1):collector-base breakdown voltage is 10V min when IC is 2.5 mA and IE is 0 mA;(2)collector-emitter breakdown voltage is 4.5V min when IC is 1 mA and IB is 0 mA;(3):collector-base cut-off cur rent is 15nA when IE is 0 mA and VCB is 4.5V;(4):collector-base capacitance is 102fF when VCB is 2 V and f is 1 MHz, etc.

BFG425W General Description

The BFG425W is designed as one kind of NPN 25 GHz wideband transistor which produced by the Philips Semiconductors with some features such as:(1)high power gain;(2)low noise figure;(3)high transition frequency;(4)gold metallization ensures excellent reliability.NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.It can be used in RF front end,wideband applications;e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.);radar detectors;pagers;satellite television tuners (SATV) and high frequency oscillators.

The quick reference data of the BFG425W can be summarized as:(1)collector-base voltage:10 V;(2)collector-emitter voltage:4.5 V;(3)DC collector current:25 mA;(4)total power dissipation:135 mW;(5)DC current gain:50 to 120;(6)feedback capacitance(IC=0;VCB=2 V;f=1 MHz):95 fF;(7)transition frequency(IC=25 mA; VCE=2 V;f=2 GHz;):95 GHz;(8)maximum unilateral power gain(IC=25 mA;VCE=2 V;f=2 GHz;):20 dB;(9)storage temperature:-65 to +150 °C;(10)junction temperature:150 °C;(11)thermal resistance from junction to soldering point:350 K/W.If you want to know more information such as the electrical AC characteristics about the BFG425W,please download the datasheet in www.seekdatasheet.com .

BFG425W Connection Diagram

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