BFG25A/X, BFG25AW, BFG31 Selling Leads, Datasheet
MFG:PHILIPS/NXP Package Cooled:SOT23-4 D/C:09+
BFG25A/X, BFG25AW, BFG31 Datasheet download
Part Number: BFG25A/X
MFG: PHILIPS/NXP
Package Cooled: SOT23-4
D/C: 09+
BFG25A/X, BFG25AW, BFG31
- Table of contents:
Info of BFG25A/X
Info of BFG25AW
Info of BFG31
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About BFG25A/X
PDF/DataSheet Download
Datasheet: BFG25A/X
File Size: 121899 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFG25AW
PDF/DataSheet Download
Datasheet: BFG25AW
File Size: 146515 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFG31
PDF/DataSheet Download
Datasheet: BFG31
File Size: 50527 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BFG25A/X General Description
NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter).
BFG25A/X Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
8 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
5 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
| IC | collector current (DC) |
- |
6.5 |
mA | |
| Ptot | total power dissipation |
Ts 165 °C; note 1 |
- |
32 |
mW |
| Tstg | storage temperature |
-65 |
150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector pin.
BFG25A/X Features
` Low current consumption (100 mA to 1 A)
` Low noise figure
` Gold metallization ensures excellent reliability.
` Low noise figure
` Gold metallization ensures excellent reliability.
BFG25A/X Typical Application
· RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz.
BFG25A/X Connection Diagram
BFG25AW General Description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
BFG25AW Features
· Low current consumption (100 mA to 1 mA)
· Low noise figure
· Gold metallization ensures excellent reliability.
· Low noise figure
· Gold metallization ensures excellent reliability.
BFG25AW Typical Application
Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems.
BFG25AW Connection Diagram
BFG31 General Description
PNP planar epitaxial transistor mounted in a plastic SOT223 envelope.
It is intended for wideband amplifier applications.
NPN complement is the BFG97.
BFG31 Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
-20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
-15 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
-3 |
V |
| IC | DC collector current |
- |
-100 |
mA | |
| Ptot | total power dissipation |
up to Ts = 135 °C; note 1 |
- |
1 |
W |
| Tstg | storage temperature |
-65 |
150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector tab.
BFG31 Features
· High output voltage capability
· High gain bandwidth product
· Good thermal stability
· Gold metallization ensures excellent reliability.
BFG31 Connection Diagram
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