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BFG17A, BFG19, BFG193

Table of contents:
Info of BFG17A
Info of BFG19
Info of BFG193

BFG17A, BFG19, BFG193 Selling Leads, Datasheet

MFG:PHI Package Cooled:SOT-143 D/C:08.09+

BFG17A, BFG19, BFG193 Datasheet download

Five Points

Part Number: BFG17A

MFG: PHI

Package Cooled: SOT-143

D/C: 08.09+

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BFG17A General Description

NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding.

It is intended for use in wideband aerial amplifiers using SMD technology.

BFG17A Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	25	V
V_CEO	collector-emitter voltage	open base	-	15	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current (DC)		-	50	mA
P_tot	total power dissipation	up to T_s = 85 °C; note 1	-	300	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Note
1. T_s is the temperature at the soldering point of the collector tab.

BFG17A Typical Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

BFG17A Connection Diagram

BFG193 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CEO	12	V
Collector-emitter voltage	V_CES	20
Collector-base voltage	V_CBO	20
Emitter-base voltage	V_EBO	2
Collector current	I_C	80	mA
Base current	I_B	10	mA
Total power dissipation, T_S 87 °C ¹⁾	P_tot	600	W
Junction temperature	T_j	150	°C
Ambient temperature	T_A	-65 ... 150
Storage temperature	T_stg	-65 ... 150
Thermal Resistance
Junction - soldering point²⁾	R_thJS	105	K/W

1T_S is measured on the collector lead at the soldering point to the pcb
2For calculation of R_thJA please refer to Application Note Thermal Resistance

BFG193 Features

·For low noise, high-gain amplifiers up to 2 GHz
· For linear broadband amplifiers
· f_T = 8 GHz
F = 1.3 dB at 900 MHz

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