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The ATF-46101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5Êmicron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 1.25Êmillimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.
ATF-46101 Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum[1]
VDS
Drain Source Voltage
V
+14
VGS
Gate Source Voltage
V
-7
VGD
Gate-Drain Voltage
V
-16
ID
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
2.0
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMOUNTING SURFACE = 25°C. 3. Derate at 13 mW/°C for TCASE > 25°C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.
ATF-46101 Features
• High Output Power: 27.0ÊdBm Typical P 1 dB at 4ÊGHz • High Gain at 1 dB Compression: 12.0ÊdB Typical G 1 dB at 4ÊGHz • High Power Efficiency: 38% Typical at 4ÊGHz