MFG:AVAGO/Agilent/AVAGO Package Cooled:NEW AND ORIGINAL D/C:09+\10+
ATF-13136-TR1G, ATF13170, ATF-13170 Datasheet download
MFG: AVAGO/Agilent/AVAGO
Package Cooled: NEW AND ORIGINAL
D/C: 09+\10+
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PDF/DataSheet Download
Datasheet: ATF10100
File Size: 44359 KB
Manufacturer: Agilent(Hewlett-Packard)
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ATF13170
File Size: 71501 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ATF10100
File Size: 44359 KB
Manufacturer: Agilent(Hewlett-Packard)
Download : Click here to Download
ATF-13170 is a kind of high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a hermetic and high reliability package.Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 2-16 GHz frequency range.There are some features as follows.First is low noise figure:1.0 dB typical at 12 GHz.Then is high associated gain:10.0 dB typical at 12 GHz.Next is high output power:17.5 dBm typical P1 dB at 12 GHz.The last one is hermetic gold-ceramic microstrip package.
What comes next is about the absolute maximum ratings.The VDS (drain-source voltage) is +5 V.The VGS (gate-source voltage) is -4 V.The IDS (drain current) is IDSS.The PT (power dissipation) is 225 mW.The TCH (channel temperature) is 175.The TSTG (storage temperature) is from -65 to +175.
The following is about the electrical specifications (TA=25).The typical NFO (optimum noise figure) is 0.8 dB at VDS=2.5 V,IDS=20 mA,f=8.0 GHz;The typical NFO (optimum noise figure) is 1.0 dB and the maximum is 1.1 dB at VDS=2.5 V,IDS=20 mA,f=12.0 GHz;The typical NFO (optimum noise figure) is 1.3 dB at VDS=2.5 V,IDS=20 mA,f=14.0 GHz.The typical GA (gain @ NFO) is 12.0 dB at VDS=2.5 V,IDS=20 mA,f=8.0 GHz;The minimum GA (gain @ NFO) is 9.0 dB and the typical is 10.0 dB at VDS=2.5 V,IDS=20 mA,f=12.0 GHz;The typical GA (gain @ NFO) is 8.5 dB at VDS=2.5 V,IDS=20 mA,f=14.0 GHz.The typical P1 dB (output power @ 1 dB gain compression) is 17.5 dBm at VDS=4 V,IDS=40 mA,f=12.0 GHz.The typical G1 dB (1 dB gain compression) is 8.5 dB at VDS=4 V,IDS=40 mA,f=12.0 GHz.The minimum gm (transconductance) is 30 mmho and the typical is 55 mmho at VDS=2.5 V,VGS=0 V.The minimum IDSS (saturated drain current) is 40 mA,the typical is 50 mA and the maximum is 90 mA at VDS=2 V,VGS=0 V.The minimum VP (pinoff voltage) is -3.0 V,the typical is -1.5 V and the maximum is -0.8 V at VDS=2.5 V,IDS=1 mA.
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