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AOP604, AOP608, AOP609

Table of contents:
Info of AOP604
Info of AOP608
Info of AOP609

AOP604, AOP608, AOP609 Selling Leads, Datasheet

MFG:Alpha & Omega Semiconductor Inc Category:Discrete Semiconductor Products Package Cooled:PDIP-8 D/C:N/A

AOP604, AOP608, AOP609 Datasheet download

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Part Number: AOP609

Category: Discrete Semiconductor Products

MFG: Alpha & Omega Semiconductor Inc

Package Cooled: PDIP-8

D/C: N/A

Description: MOSFET N/P-CH COMPL 60V 8-PDIP

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AOP604 General Description

The AOP604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses.

AOP604 Maximum Ratings

Parameter		Symbol	Max n-channel	Max p-channel	Units
Drain-Source Voltage		V_DS	30	-30	V
Gate-Source Voltage		V_GS	±20	±20	V
Continuous Drain Current ^A	T_A=25°C	_ID	7.5	-6.6	A
Continuous Drain Current ^A	T_A=70°C	_ID	6	-5.3
Pulsed Drain Current ^B		I_DM	30	-30
Power Dissipation	T_A=25°C	P_D	2.5	2.5	W
Power Dissipation	T_A=70°C	P_D	1.6	1.6	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	-55 to 150	°C

AOP604 Features

n-channel              p-channel
V_DS (V) = 30V        -30V
I_D= 7.5A               -6.6A
R_DS(ON)
< 28m                  < 35m (V_GS = 10V)
< 43m                  < 58m (V_GS = 4.5V)
Schottky
V_DS=30V, I_F=3A, V_F<0.5V@1A

AOP608 General Description

The AOP608 uses advanced trench technology MOSFETs to provide excellent R_DS(ON)and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a Green Product ordering option. AOP608 and AOP608L are electrically identical.

AOP608 Maximum Ratings

Parameter		Symbol	Max n-channel	Max p-channel	Units
Drain-Source Voltage		V_DS	40	-40	V
Gate-Source Voltage		V_GS	±20	±20	V
Continuous Drain Current	T_A=25°C	I_D	6.3	-5.5	A
Continuous Drain Current	T_A=70°C	I_D	5	-4.4
Pulsed Drain Current		I_DM	20	-20
Power Dissipation	T_A=25°C	P_D	2.5	2.5	W
Power Dissipation	T_A=70°C	P_D	1.6	1.6	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	-55 to 150	°C

AOP608 Features

n-channel                             p-channel
V_DS (V) = 40V                       -40V
I_D = 6.3A (V_GS=10V)             -5.5A (V_GS = -10V)
R_DS(ON)                                 R_DS(ON)
< 33m (V_GS=10V)               < 45m (V_GS = -10V)
< 46m (V_GS=4.5V)               < 63m (V_GS = -4.5V)

AOP608 Connection Diagram

AOP609 Parameters

Technical/Catalog Information	AOP609
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4.7A, 3.5A
Rds On (Max) @ Id, Vgs	60 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	570pF @ 30V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	7nC @ 10V
Package / Case	8-DIP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AOP609 AOP609 785 1142 5 ND 78511425ND 785-1142-5

AOP609 General Description

The AOP609 uses advanced trench technology MOSFETs to provide excellent R _DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications). AOP609L is a Green Product ordering option. AOP609 and AOP609L are electrically identical.

AOP609 Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	-60	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current ^A	T_A=25°C	I_D	-3.5	A
	T_A=100°C		-2.9
Pulsed Drain Current ^B		I_DM	-20
Power Dissipation ^A	T_A=25°C	P_DSM	2.5	W
	T_A=100°C		1.6
Junction and Storage Temperature Range		T_J,T_STG	-55 to 150	°C

AOP609 Features

n-channel                            p-channel
V_DS (V) = 60V                     -60V
I_D = 4.7A (V_GS=10V)            -3.5A (V_GS=-10V)
R _DS(ON)                               R _DS(ON)< 60m (V_GS=10V)             < 115m (V_GS =-10V)
< 75m (V_GS=4.5V)            < 140m (V_GS =-4.5V)
ESD Rating: 1500V HBM      3000V HMB

AOP609 Connection Diagram

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