MFG:Alpha & Omega Semiconductor Inc Category:Discrete Semiconductor Products Package Cooled:04 D/C:5
AOP3417J, AOP600, AOP605 Datasheet download
Category: Discrete Semiconductor Products
MFG: Alpha & Omega Semiconductor Inc
Package Cooled: 04
D/C: 5
Description: MOSFET N/P-CH COMPL 30V 8-PDIP
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Datasheet: AOP-12D
File Size: 232527 KB
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Datasheet: AOP600
File Size: 512106 KB
Manufacturer: ALPHA
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PDF/DataSheet Download
Datasheet: AOP605
File Size: 512000 KB
Manufacturer: ALPHA
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The AOP600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications Standard Product AOP600 is Pb-free (meets ROHS & Sony 259 specifications). AOP600L is a Green Product ordering option. AOP600 and AOP600L are electrically identical.
Parameter |
Symbol |
Max n-channel |
Max p-channel |
Units |
|
| Drain-Source Voltage | VDS |
30 |
-30 |
V |
|
| Gate-Source Voltage | VGS |
±20 |
±20 |
V |
|
| Continuous Drain Current A |
TA=25°C | ID |
7.5 |
-6.6 |
A |
| TA=100°C | 6 |
-5.3 |
|||
| Pulsed Drain Current B | IDM |
30 |
-30 |
||
| Power Dissipation A | TA=25°C | PDSM |
2.5 |
2.5 |
W |
| TA=100°C | 1.6 |
1.6 |
|||
| Junction and Storage Temperature Range | TJ,TSTG |
-55 to 150 |
-55 to 150 |
°C |
|
| Technical/Catalog Information | AOP605 |
| Vendor | Alpha & Omega Semiconductor Inc |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7.5A, 6.6A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 820pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 16.6nC @ 4.5V |
| Package / Case | 8-DIP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | AOP605 AOP605 785 1140 5 ND 78511405ND 785-1140-5 |
The AOP605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.
|
Parameter |
Symbol |
Maximum |
Max p-channel |
Units | |
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
30 ±20 |
-30 ±20 |
V V | |
| Continuous Drain Current G |
TA=25°C TA=70°C |
ID |
7.5 6 |
-6.6 -5.3 |
A |
| Pulsed Drain Current B |
IDM |
30 |
-30 | ||
| Power Dissipation B | TC=25°C TC=70°C |
PD |
100 50 |
2.5 1.6 |
W |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
-55 to 150 |
°C | |
| Thermal Characteristics: n-channel | |||||
|
Parameter |
Symbol |
Typ | Max |
Units | |
| Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C |
t 10s Steady-State Steady-State |
RJL RJA |
40 67 33 |
50 80 40 |
°C/W °C/W °C/W |
| Thermal Characteristics: n-channel | |||||
|
Parameter |
Symbol |
Typ | Max |
Units | |
| Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C |
t 10s Steady-State Steady-State |
RJL RJA |
38 66 30 |
50 80 40 |
°C/W °C/W °C/W |
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