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AOP604

Features: n-channel p-channelVDS (V) = 30V -30VID = 7.5A -6.6ARDS(ON)< 28m< 35m (VGS = 10V)< 43m < 58m (VGS = 4.5V)SchottkyVDS=30V, IF=3A, VF<0.5V@1ASpecifications Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage VDS 30 -30 V Gate-Source Vol...

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SeekIC No. : 004285976 Detail

AOP604: Features: n-channel p-channelVDS (V) = 30V -30VID = 7.5A -6.6ARDS(ON)< 28m< 35m (VGS = 10V)< 43m < 58m (VGS = 4.5V)SchottkyVDS=30V, IF=3A, VF<0.5V@1ASpecifications Parameter Sym...

AOP604 Data Sheet

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Part Number:
AOP604
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

n-channel p-channel
VDS (V) = 30V -30V
ID = 7.5A -6.6A
RDS(ON)
< 28m< 35m (VGS = 10V)
< 43m < 58m (VGS = 4.5V)
Schottky
VDS=30V, IF=3A, VF<0.5V@1A




Specifications

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current A TA=25°C ID 7.5 -6.6 A
TA=70°C 6 -5.3
Pulsed Drain Current B IDM 30 -30
Power Dissipation TA=25°C PD 2.5 2.5 W
TA=70°C 1.6 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C





Description

The AOP604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses.




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