AOP605

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Series: -
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: 2.5W
Input Capacitance (Ciss) @ Vds: 820pF @ 15V
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Manufacturer: Alpha & Omega Semiconductor Inc
Current - Continuous Drain (Id) @ 25° C: 7.5A, 6.6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.5A, 10V
Gate Charge (Qg) @ Vgs: 16.6nC @ 4.5V


Features:

·n-channel p-channel
·V_DS (V) = 30V -30V
·I_D = 7.5A (V_GS = 10V) -6.6A (V_GS = -10V)
·R_DS(ON)
·< 28mΩ (V_GS = 10V) < 35mΩ (V_GS = -10V)
·< 43mΩ (V_GS = 4.5V) < 58mΩ (V_GS = -4.5V)




Pinout






Specifications

Parameter		Symbol	Maximum	Max p-channel	Units
Drain-Source Voltage Gate-Source Voltage		VDS VGS	30 ±20	-30 ±20	V V
Continuous Drain Current G	TA=25°C TA=70°C	ID	7.5 6	-6.6 -5.3	A
Pulsed Drain Current B		IDM	30	-30
Power Dissipation B	TC=25°C TC=70°C	PD	100 50	2.5 1.6	W
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175	-55 to 150	°C

Thermal Characteristics: n-channel
Parameter		Symbol	Typ	Max	Units
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C	t 10s Steady-State Steady-State	RJL RJA	40 67 33	50 80 40	°C/W °C/W °C/W

Thermal Characteristics: n-channel
Parameter		Symbol	Typ	Max	Units
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C	t 10s Steady-State Steady-State	RJL RJA	38 66 30	50 80 40	°C/W °C/W °C/W

Description

The AOP605 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.

Parameters:

Technical/Catalog Information	AOP605
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	7.5A, 6.6A
Rds On (Max) @ Id, Vgs	28 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	820pF @ 15V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	16.6nC @ 4.5V
Package / Case	8-DIP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AOP605 AOP605 785 1140 5 ND 78511405ND 785-1140-5