7N65, 7N80 TO220, 7N80 TO3P Selling Leads, Datasheet
MFG:UTC Package Cooled:TO-220F D/C:08+
7N65, 7N80 TO220, 7N80 TO3P Datasheet download
Part Number: 7N65
MFG: UTC
Package Cooled: TO-220F
D/C: 08+
7N65, 7N80 TO220, 7N80 TO3P
- Table of contents:
Info of 7N65
Info of 7N80 TO220
Info of 7N80 TO3P
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About 7N60
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Datasheet: 7N60
File Size: 175315 KB
Manufacturer: UTC
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7N65 General Description
The UTC 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
7N65 Maximum Ratings
| Parameter |
Symbol |
Rating |
Unit | |
| Drain-Source Voltage |
VDSS |
650 |
V | |
| Gate-Source Voltage |
VGSS |
±30 |
V | |
| Continuous Drain Current | TC = 25 |
ID |
7.0 4.7 |
A A |
| TC = 100 | ||||
| Drain Current Pulsed (Note 1) |
IDM |
28 |
A | |
| Avalanche Energy, Single Pulsed (Note 2) |
EAS |
530 |
mJ | |
| Avalanche Energy, Repetitive, Limited by TJMAX |
EAR |
14.2 |
mJ | |
| k Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns | |
| Power Dissipation (TC = 25) |
PD |
142 |
W | |
| Operating Junction and Storage Temperature Range |
Tj |
+150 |
||
| Maximum Junction-to-Ambient* |
TSTG |
-55 ~ +150 |
/W | |
7N65 Features
* RDS(ON) = 1.35 @VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
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