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7N60B, 7N70, 7N80

7N60B, 7N70, 7N80 Selling Leads, Datasheet

MFG:FSC  Package Cooled:TO-220  D/C:04+

7N60B, 7N70, 7N80 Picture

7N60B, 7N70, 7N80 Datasheet download

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Part Number: 7N60B

 

MFG: FSC

Package Cooled: TO-220

D/C: 04+

 

 

 
 
 
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  • 7N60B

  • Vendor: PHILIPS Pack: TO D/C: 07+& Qty: 100  Adddate: 2024-11-08
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  • SHENZHEN BINHAI INDUSTRY CO.,LTD   China
    Contact: Mr.chenrongjia   MSN:wind.brsmq@hotmail.com
    Tel: 086-0755-83214027
    Fax: 086-0755-83227110
    (0)
  • 7N60

  • Pack: TO D/C: 10+& Qty: 500  Adddate: 2024-11-08
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  • Yuexunfa Electronics   China
    Contact: Ms.linlinda   MSN:yanxuan5299@hotmail.com
    Tel: 86-755-83778358
    Fax: 86-755-83778378
    (18)
  • 7N60

  • Vendor: AAT Pack: TO D/C: 08+& Qty: 8500 Note: hot offer,special price  Adddate: 2024-11-08
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  • Easywin electronics enterprise Ltd.   China
    Contact: Mr.Leonlu   MSN:fieleon@hotmail.com
    Tel: 0086-0755-82544219
    Fax: 0086-0755-82544202
    (0)
  • 7N60

  • Qty: 10000 Note: every time with large quantity in stock  Adddate: 2024-11-08
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  • golden hongfa electronic co.ltd   China
    Contact: Ms.Sam wong   MSN:cnghf5@hotmail.com
    Tel: 86-020-83320105
    Fax: 86-20-83321437
    (321)

About 7N60

PDF/DataSheet Download

Datasheet: 7N60

File Size: 175315 KB

Manufacturer: UTC

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7N70 Suppliers

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7N70 General Description

The UTC 7N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

7N70 Maximum Ratings

Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current TC = 25
ID
7.0
A
TC = 100
4.7
A
Drain Current Pulsed (Note 1)
IDM
28
A
Avalanche Energy, Single Pulsed (Note 2)
EAS
530
mJ
Avalanche Energy, Repetitive, Limited by TJMAX
EAR
14.2
mJ
k Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation (TC = 25)
PD
142
W
Operating Junction and Storage Temperature Range
Tj
+150
Maximum Junction-to-Ambient*
TSTG
-55 ~ +150
/W

7N70 Features

* RDS(ON) = 1.5 @VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

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