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7N60L

Features: ` RDS(ON) = 1.2 @VGS = 10 V` Ultra low gate charge (typical 29 nC )` Low reverse transfer Capacitance ( CRSS = typical 16pF )` Fast switching capability` Avalanche energy tested` Improved dv/dt capability, high ruggednessSpecifications Parameter Symbol Rating Unit Drain to sou...

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SeekIC No. : 004253325 Detail

7N60L: Features: ` RDS(ON) = 1.2 @VGS = 10 V` Ultra low gate charge (typical 29 nC )` Low reverse transfer Capacitance ( CRSS = typical 16pF )` Fast switching capability` Avalanche energy tested` Improved ...

7N60L Data Sheet

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Part Number:
7N60L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` RDS(ON) = 1.2 @VGS = 10 V
` Ultra low gate charge (typical 29 nC )
` Low reverse transfer Capacitance ( CRSS = typical 16pF )
` Fast switching capability
` Avalanche energy tested
` Improved dv/dt capability, high ruggedness


Specifications

Parameter Symbol Rating Unit
Drain to source voltage
7N60L-A
7N60L-B		 VDSS 600
650		 V
Gate to source voltage VGSS ±30 V
Avalanche Current (Note 1) IAR 7.4 A
Continuous Drain Current ID 7.4 A
Pulsed Drain Current (Note 1) IDM 29.6 A
Avalanche Energy
Single Pulsed (Note 2)		 EAS 600 mJ
Repetitive (Note 1) EAR 14.2 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Power dissipation TO-220
TO-220F		 PD

142
81

 W
Junction temperature TJ 150
Storage temperature Tstg -55 to +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.


Description

The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET 7N60L is usually used at high speed switching applications in switching power supplies and adaptors.




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