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7N60

Features: * RDS(ON) = 1 @VGS = 10 V* Low gate and reverse transfer Capacitance ( C: 16 pF typical )* Fast switching capability* Avalanche energy tested* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 ...

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SeekIC No. : 004253323 Detail

7N60: Features: * RDS(ON) = 1 @VGS = 10 V* Low gate and reverse transfer Capacitance ( C: 16 pF typical )* Fast switching capability* Avalanche energy tested* Improved dv/dt capability, high ruggednessSpe...

7N60 Data Sheet

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Part Number:
7N60
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* RDS(ON) = 1 @VGS = 10 V
* Low gate and reverse transfer Capacitance ( C: 16 pF typical )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness


Specifications

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
7.4
A
Continuous Drain Current TC = 25°C
ID
7.4
A
TC = 100°C
4.7
A
Pulsed Drain Current (Note 1)
IDM
29.6
A
Avalanche Energy, Single Pulsed (Note 2)
EAS
580
mJ
Avalanche Energy, Repetitive Limited by TJ(MAX)
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation (TC = 25)
Derate above 25
PD
142
W
1.14
W/
Junction Temperature
TJ
+150
Operating and Storage Temperature
TSTG
-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.


Description

The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET 7N60 is usually used at high speed switching applications in switching power supplies and adaptors.




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