7N251-S010, 7N255-S008, 7N60 Selling Leads, Datasheet
MFG:NEW Package Cooled:IN STOCK D/C:07+
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7N251-S010, 7N255-S008, 7N60 Datasheet download
Part Number: 7N251-S010
MFG: NEW
Package Cooled: IN STOCK
D/C: 07+
MFG:NEW Package Cooled:IN STOCK D/C:07+
7N251-S010, 7N255-S008, 7N60 Datasheet download
MFG: NEW
Package Cooled: IN STOCK
D/C: 07+
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Datasheet: 7N60
File Size: 175315 KB
Manufacturer: UTC
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The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
PARAMETER |
SYMBOL |
RATINGS |
UNIT | |
Drain-Source Voltage |
VDSS |
600 |
V | |
Gate-Source Voltage |
VGSS |
±30 |
V | |
Avalanche Current (Note 1) |
IAR |
7.4 |
A | |
Continuous Drain Current | TC = 25°C |
ID |
7.4 |
A |
TC = 100°C |
4.7 |
A | ||
Pulsed Drain Current (Note 1) |
IDM |
29.6 |
A | |
Avalanche Energy, Single Pulsed (Note 2) |
EAS |
580 |
mJ | |
Avalanche Energy, Repetitive Limited by TJ(MAX) |
EAR |
14.2 |
mJ | |
Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns | |
Power Dissipation (TC = 25) Derate above 25 |
PD |
142 |
W | |
1.14 |
W/ | |||
Junction Temperature |
TJ |
+150 |
||
Operating and Storage Temperature |
TSTG |
-55 ~ +150 |