40L40CW, 40L45CW, 40MT120UH Selling Leads, Datasheet
MFG:Microsemi Package Cooled:TO-3P D/C:08+/09+
40L40CW, 40L45CW, 40MT120UH Datasheet download
Part Number: 40L40CW
MFG: Microsemi
Package Cooled: TO-3P
D/C: 08+/09+
40L40CW, 40L45CW, 40MT120UH
- Table of contents:
Info of 40L40CW
Info of 40L45CW
Info of 40MT120UH
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About 40L40CW
PDF/DataSheet Download
Datasheet: 40L40CW
File Size: 145029 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About 40l45cw
PDF/DataSheet Download
Datasheet: 40l45cw
File Size: 92079 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About 40MT120UH
PDF/DataSheet Download
Datasheet: 40MT120UH
File Size: 694402 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
40L40CW General Description
The 40L..CW center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies.
40L40CW Maximum Ratings
| Parameters | 40L15CW | Units | Conditions | |
| IF(AV) Max. Average Forward (Per Leg) Current * See Fig. 5 (Per Device) |
20 | A | 50% duty cycle @ TC = 86°C, rectangular wave form | |
| 40 | ||||
| IFSM Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7 |
1240 | A | 5s Sine or 3s Rect. pulse | Following any rated load condition and with rated VRRM applied |
| 350 | 10ms Sine or 6ms Rect. pulse | |||
| EAS Non-Repetitive Avalanche Energy (Per Leg) |
20 | mJ | TJ = 25 °C, IAS = 2 Amps, L = 5 mH | |
| IAR Repetitive Avalanche Current (Per Leg) |
3 | A | Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical | |
40L40CW Features
·150° C TJ operation
·Center tap TO-247 package
·High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
·Very low forward voltage drop
·High frequency operation
·Guard ring for enhanced ruggedness and long term reliability
·Center tap TO-247 package
·High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
·Very low forward voltage drop
·High frequency operation
·Guard ring for enhanced ruggedness and long term reliability
40L45CW General Description
The 40L45CW center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies.
leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies.
40L45CW Maximum Ratings
| MAXIMUM RATINGS | 409CNQ | Units | Conditions | |
| IF(AV) Max. AverageForward (PerLeg) Current * See Fig. 5 (PerDevice) |
20 | A | 50% duty cycle @ TC = 78 °C, rectangular wave form | |
| 40 | ||||
| IFSM Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7 |
1240 | A | 5s Sine or 3s Rect. pulse | Following any rated load condition and with rated VRRM applied |
| 350 | 5ms Sine or 6ms Rect. pulse | |||
| EAS Non-RepetitiveAvalancheEnergy Per Leg) |
20 | mJ | TJ = 25 °C, IAS = 3 Amps, L = 4.4 mH | |
| IAR RepetitiveAvalancheCurrent (Per Leg) |
3 | A | Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical | |
40L45CW Features
150 TJ operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
40MT120UH Maximum Ratings
| Parameters | Max | Units | |
| VCES Collector-to-Emitter Breakdown Voltage | 1200 | V | |
| I C Continuos Collector Current |
TC = 25°C |
80 | A |
| @ TC = 105°C | 40 | ||
| I CM Pulsed Collector Current | 160 | ||
| I LM Clamped Inductive Load Current | 160 | ||
| I F Diode Continuous Forward Current | @ TC = 105°C | 21 | |
| I FM Diode Maximum Forward Current | 160 | ||
| VGE Gate-to-Emitter Voltage | ± 20 | V | |
| VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min | 2500 | ||
| PD Maximum Power Dissipation (only IGBT) | @ TC = 25°C | 463 | W |
| @ TC = 100°C | 185 | ||
40MT120UH Features
•UltraFast Non Punch Through (NPT) Technology
• Positive VCE(ON)Temperature Coefficient
• 10s Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
• Low Diode VF
• Square RBSOA
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for High Speed Operation
• UL approved (file E78996)
• Positive VCE(ON)Temperature Coefficient
• 10s Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
• Low Diode VF
• Square RBSOA
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for High Speed Operation
• UL approved (file E78996)
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