40MT120UHAPbF

DescriptionThe 40MT120UHAPbF is designed as one kind of half bridge IGBT MTPs (ultrafast NPT IGBT) with current of 80A. Its benefits include optimized for welding, UPS, SMPS applications, outstanding ZVS, hard switching operation, rugged with ultrafast performance and so on.40MT120UHAPbF has twe...

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SeekIC No. : 004230382 Detail

40MT120UHAPbF: DescriptionThe 40MT120UHAPbF is designed as one kind of half bridge IGBT MTPs (ultrafast NPT IGBT) with current of 80A. Its benefits include optimized for welding, UPS, SMPS applications, outstand...

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Part Number:
40MT120UHAPbF
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Description

The 40MT120UHAPbF is designed as one kind of "half bridge" IGBT MTPs (ultrafast NPT IGBT) with current of 80A. Its benefits include optimized for welding, UPS, SMPS applications, outstanding ZVS, hard switching operation, rugged with ultrafast performance and so on.

40MT120UHAPbF has twelve features. (1)Ultrafast non punch through (NPT) technology. (2)Positive Vce(on) temperature coefficient. (3)10s short circuit capability. (4)Square RBSOA. (5)HEXFRED antiparallel diodes  with ultrasoft reverse recovery and low Vf. (6)Al2O3 DBC. (7)Optional SMD thermistor (NTC). (8)Very low stray inductance design for high speed operation. (9)UL approved file E78996. (10)Speed 8kHz to 60kHz. (11)Compliant to RoHS directive 2002/95/EC. (12)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of the 40MT120UHAPbF have been concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be 1200V. (2)Its continuous collector current would be 80A at Tc=25°C and would be 40A at Tc=104°C. (3)Its pulsed collector current would be 160A.  (4)Its clamped inductive load current would be 160A. (5)Its diode continuous forward current would be 21A. (6)Its diode maximum forward current would be 160A. (7)Its gate to emitter voltage would be +/-20V. (8)Its RMS isolation voltage would be 2500V. (9)Its maximum power dissipation (only IGBT) would be 463W at Tc=25°C and would be 185W at Tc=100°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of the 40MT120UHAPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its temperature coefficient of breakdown voltage would be typ +1.1V/°C. (3)Its gate threshold voltage would be min 4V and max 6V. At present we have not got so much information about this IC and we would try hard to get more information about 40MT120UHAPbF. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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