Features: •UltraFast Non Punch Through (NPT) Technology• Positive VCE(ON)Temperature Coefficient• 10s Short Circuit Capability• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery• Low Diode VF• Square RBSOA• Aluminum Nitride DBC• Optional...
40MT120UH: Features: •UltraFast Non Punch Through (NPT) Technology• Positive VCE(ON)Temperature Coefficient• 10s Short Circuit Capability• HEXFRED TM Antiparallel Diodes with UltraSoft ...
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Features: • UltraFast Non Punch Through (NPT) Technology• Positive VCE(ON)Temperature ...
DescriptionThe 40MT120UHAPbF is designed as one kind of half bridge IGBT MTPs (ultrafast NPT IGB...
Parameters | Max | Units | |
VCES Collector-to-Emitter Breakdown Voltage | 1200 | V | |
I C Continuos Collector Current |
TC = 25°C |
80 | A |
@ TC = 105°C | 40 | ||
I CM Pulsed Collector Current | 160 | ||
I LM Clamped Inductive Load Current | 160 | ||
I F Diode Continuous Forward Current | @ TC = 105°C | 21 | |
I FM Diode Maximum Forward Current | 160 | ||
VGE Gate-to-Emitter Voltage | ± 20 | V | |
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min | 2500 | ||
PD Maximum Power Dissipation (only IGBT) | @ TC = 25°C | 463 | W |
@ TC = 100°C | 185 |