MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOT-223-3 D/C:08+
2STN2540-A, 2SU8423, 2SV164-T2 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SOT-223-3
D/C: 08+
Description: TRANSISTOR PNP BIPOLAR SOT-223
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Datasheet: 2STB121PM
File Size: 263442 KB
Manufacturer: ETC [ETC]
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Datasheet: 2SV293
File Size: 74803 KB
Manufacturer: Toshiba
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| Technical/Catalog Information | 2STN2540-A |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 5A |
| Power - Max | 1.6W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5A, 2V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 200mA, 2A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2STN2540 A 2STN2540A |
The device in a PNP transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-base voltage(IE = 0) |
-40 |
V |
|
VCEO |
Collector-emitter voltage(IB = 0) |
-40 |
V |
|
VEBO |
Emitter-base voltage(IC = 0) |
-6 |
V |
|
IC |
Collector current |
-5 |
A |
|
ICM |
Collector peak current (tP < 5ms) |
-10 |
A |
|
IBM |
Base peak current (tP < 5ms) |
-2 |
A |
|
Ptot |
Total dissipation at Tamb = 25 |
1.6 |
W |
|
Tstg |
Storage temperature |
-65 to 150 |
|
|
TJ |
Max. operating junction temperature |
150 |
· The device is qualified for automotive application
· Very low collector-emitter saturation voltage
· High current gain characteristic
· Fast switching speed
· Surface mounting device in medium power SOT-223 package
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