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The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
2STD1665 Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-base voltage (IE = 0)
150
V
VCEO
Collector-emitter voltage (IB = 0)
65
V
VEBO
Emitter-base voltage (IC = 0)
7
V
IC
Collector current
6
A
ICM
Collector peak current (tP < 5ms)
20
A
IB
Base current
1
A
Ptot
Total dissipation at Tc = 25
15
W
Tstg
Storage temperature
-65 to 150
TJ
Max. operating junction temperature
150
2STD1665 Features
Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package in tube (suffix"-1") Surface mounting DPAK (TO-252) power package in tape & reel (suffix"T4")
2STD1665 Typical Application
Ccfl drivers Voltage regulators Relay drivers High efficiency low voltage switching applications