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2STF474WP, 2STN2540, 2STR1230

Table of contents:
Info of 2STF474WP
Info of 2STN2540
Info of 2STR1230

2STF474WP, 2STN2540, 2STR1230 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:DIP-18 D/C:04+

2STF474WP, 2STN2540, 2STR1230 Datasheet download

Five Points

Part Number: 2STN2540

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: DIP-18

D/C: 04+

Description: TRANS NPN FAST SW 30V SOT-23

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2STN2540 Parameters

Technical/Catalog Information	2STN2540
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	5A
Power - Max	1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 5A, 2V
Vce Saturation (Max) @ Ib, Ic	200mV @ 200mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Digi-Reel?
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STN2540 2STN2540 497 5901 6 ND 49759016ND 497-5901-6

2STN2540 General Description

The device is a PNP transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

2STN2540 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CBO	Collector-base voltage (I_E = 0)	-40	V
V_CEO	Collector-emitter voltage (I_B = 0)	-40	V
V_EBO	Emitter-base voltage (I_C = 0)	-6	V
I_C	Collector current	-5	A
I_CM	Collector peak current (t_P < 5ms)	-10	A
I_BM	Base peak current (t_P< 5ms)	-2
P_tot	Total dissipation at T_amb = 25	1.6	W
T_stg	Storage temperature	-65 to 150
T_J	Max. operating junction temperature	150

2STN2540 Features

Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Surface mounting device in medium power SOT-223 package

2STN2540 Typical Application

Emergency lighting
LED
CCFL drivers (back lighting)
Voltage regulation
Relay driver

2STR1230 Parameters

Technical/Catalog Information	2STR1230
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1.5A
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STR1230 2STR1230 497 5685 2 ND 49756852ND 497-5685-2

2STR1230 General Description

The device is a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary PNP is the 2STR2230.

2STR1230 Maximum Ratings

SYMBOL	PARAMETER	Value	UNIT
V_CBO	Collector-base voltage (I_E = 0)	30	V
V_CBO	Collector-emitter voltage (I_B = 0)	0	V
V_EBO	Emitter-base voltage (I_C= 0)	5	V
I_C	Collector current	1.5	A
I_CM	Collector peak current (tP < 5ms)	3	A
P_TOT	Total dissipation at T_C = 25	0.5	W
T_J	Storage temperature	150
T_stg	Max. operating junction temperature	-65 to 200

2STR1230 Features

Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface mounting circuits
In compliance with the 2002/93/EC European Directive

2STR1230 Typical Application

LED
Motherboard & hard disk drive
Mobile equipment
Battery charger
Voltage regulation

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