MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP-20 D/C:0420+
2STB54910PM-T, 2STC4468, 2STC5200 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SOP-20
D/C: 0420+
Description: TRANS NPN HP BIPO 230V TO-264
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PDF/DataSheet Download
Datasheet: 2STB121PM
File Size: 263442 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2STB121PM
File Size: 263442 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2STB121PM
File Size: 263442 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | 2STC4468 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 140V |
| Current - Collector (Ic) (Max) | 10A |
| Power - Max | 100W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Frequency - Transition | 20MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-3P |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2STC4468 2STC4468 497 7057 5 ND 49770575ND 497-7057-5 |
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-emitter voltage (IE = 0) |
200 |
V |
|
VCEO |
Collector-emitter voltage (IB = 0) |
140 |
V |
|
VEBO |
Collector-base voltage (IC = 0) |
6 |
V |
|
IC |
Collector current |
10 |
A |
|
ICM |
Collector peak current (tP < 5ms) |
20 |
A |
|
PTOT |
Total dissipation at Tc = 25 |
100 |
W |
|
Tstg |
Storage temperature |
-65 to 150 |
|
|
TJ |
Max. operating junction temperature |
150 |
| Technical/Catalog Information | 2STC5200 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 230V |
| Current - Collector (Ic) (Max) | 15A |
| Power - Max | 150W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Frequency - Transition | 30MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-264 |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2STC5200 2STC5200 497 7058 5 ND 49770585ND 497-7058-5 |
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
| SYMBOL | PARAMETER | RATING | UNIT |
| VCBO | Collector to base voltage(IE = 0) | 230 | V |
| VCEO | Collector to emitter voltage(IB = 0) | 230 | V |
| VEBO | Emitter to base voltage(IC = 0) | 5 | V |
| IC | Collector current | 15 | A |
| ICM | Collector current (pulse) | 30 | A |
| Ptot | Total dissipation atTC = 25 | 150 | W |
| Tj | Junction temperature | 150 | |
| Tstg | Storage temperaturerange | -55 to +150 |
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