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2STB54910PM-T, 2STC4468, 2STC5200

Table of contents:
Info of 2STB54910PM-T
Info of 2STC4468
Info of 2STC5200

2STB54910PM-T, 2STC4468, 2STC5200 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP-20 D/C:0420+

2STB54910PM-T, 2STC4468, 2STC5200 Datasheet download

Five Points

Part Number: 2STC4468

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: SOP-20

D/C: 0420+

Description: TRANS NPN HP BIPO 230V TO-264

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2STC4468 Parameters

Technical/Catalog Information	2STC4468
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	10A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A
Frequency - Transition	20MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STC4468 2STC4468 497 7057 5 ND 49770575ND 497-7057-5

2STC4468 General Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

2STC4468 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CBO	Collector-emitter voltage (IE = 0)	200	V
V_CEO	Collector-emitter voltage (IB = 0)	140	V
V_EBO	Collector-base voltage (IC = 0)	6	V
I_C	Collector current	10	A
I_CM	Collector peak current (tP < 5ms)	20	A
P_TOT	Total dissipation at Tc = 25	100	W
T_stg	Storage temperature	-65 to 150
T_J	Max. operating junction temperature	150

2STC4468 Features

·High breakdown voltage V_CEO=140V
·Complementary to 2STA1695
·Fast-switching speed
·Typical f_t =20MHz
·Fully characterized at 125 oC

2STC4468 Typical Application

·Audio power amplifier

2STC5200 Parameters

Technical/Catalog Information	2STC5200
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	230V
Current - Collector (Ic) (Max)	15A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STC5200 2STC5200 497 7058 5 ND 49770585ND 497-7058-5

2STC5200 General Description

This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

2STC5200 Maximum Ratings

SYMBOL	PARAMETER	RATING	UNIT
V_CBO	Collector to base voltage(IE = 0)	230	V
V_CEO	Collector to emitter voltage(IB = 0)	230	V
V_EBO	Emitter to base voltage(IC = 0)	5	V
I_C	Collector current	15	A
I_CM	Collector current (pulse)	30	A
P_tot	Total dissipation atTC = 25	150	W
T_j	Junction temperature	150
T_stg	Storage temperaturerange	-55 to +150

2STC5200 Features

· High breakdown voltage VCEO > 230V
· Complementary to 2STA1943
· Fast-switching speed
· Typical fT = 30 MHz

2STC5200 Typical Application

·Audio power amplifier

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