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The 2STF2360 and 2STN2360 are PNP transistors manufactured using new "PB-HDC" (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
2STN2360 Maximum Ratings
Symbol
Parameter
Value
Unit
2STF2360
2STN2360
SOT-89
SOT-223
VCBO
Collector-Base Voltage (IE= 0)
-60
V
VCEO
Collector-Emitter Voltage (IB=0)
-60
V
VEBO
Emitter-Base Voltage (IC= 0)
-6
V
IC
Collector Current
-3
A
ICM
Collector Peak Current (tP<5ms)
-5
A
IB
Base Current
-0.2
A
IBM
Base Peak Current (tP < 5ms)
-0.4
A
PTOT
Total dissipation at Tamb = 25
1.4
1.6
W
Tstg
Storage Temperature
-65 to 150
TJ
Max. Operating Junction Temperature
150
2STN2360 Features
·Very low collector-emitter satuaration voltage ·High current gain characteristic ·Fast-switching speed ·In Complance with the 2002/93/EC European Directive ·Surface mounting devices in medium power SOT-223 and SOT-89 packages ·Available in tape & reel packing