12N65, 12N6LE, 12N70 Selling Leads, Datasheet
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12N65, 12N6LE, 12N70
- Table of contents:
Info of 12N65
Info of 12N6LE
Info of 12N70
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About 12N035
PDF/DataSheet Download
Datasheet: 12N035
File Size: 67243 KB
Manufacturer:
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About 12N035
PDF/DataSheet Download
Datasheet: 12N035
File Size: 67243 KB
Manufacturer:
Download : Click here to Download
About 12N035
PDF/DataSheet Download
Datasheet: 12N035
File Size: 67243 KB
Manufacturer:
Download : Click here to Download
12N70 General Description
The UTC 12N70 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC's proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.
12N70 Maximum Ratings
| Symbol | PARAMETER | Rating | Unit | |
| VDSS | Drain-Source Voltage | 700 | V | |
| VGSS | Gate-source voltage | ±30 |
V | |
| ID | Continuous Drain Current | 12 | A | |
| IDM | Pulsed Drain Current (Note 1) | 48 | A | |
| EAS | Avalanche Energy | Single Pulsed (Note 2) | 790 | mJ |
| EAR | Repetitive (Note 1) | 24 | mJ | |
| IAR | Avalanche Current (Note 1) | 12 | A | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
| TJ | Junction Temperature | +150 | ||
| TOPR | Operating Temperature | -55 ~ +150 | ||
| Tstg | Storage temperatur | -55 ~ +150 | ||
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
12N70 Features
* RDS(ON) = 0.7 @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
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