Features: • Critical DC Electrical parameters specified at elevated Temp.• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser• Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.045 ID = 12ASpecif...
12N035: Features: • Critical DC Electrical parameters specified at elevated Temp.• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser• ...
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Symbol |
Parameter |
Max |
Unit |
ID |
Drain Current |
12 |
A |
-Continues | |||
-Pulsed |
36 | ||
VDSS |
Drain-Source Voltage |
30 |
V |
VGSV |
Gate Source Voltage |
±20 |
V |
PD |
Total Power Dissipation @ TC =25°C |
50 |
W |
Derate above 25°C |
0.4 |
W/°C | |
TJ |
Operating and Storage |
-65 to 175 |
°C |
TSTG |
Temperature Range |
The Bay Linear n-channel power field effect transistors 12N035 are produced using high cell density DMOS technology , the 12N035 particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts