12N035

Features: • Critical DC Electrical parameters specified at elevated Temp.• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser• Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.045 ID = 12ASpecif...

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12N035 Picture
SeekIC No. : 004209156 Detail

12N035: Features: • Critical DC Electrical parameters specified at elevated Temp.• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser• ...

floor Price/Ceiling Price

Part Number:
12N035
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Critical DC Electrical parameters specified at elevated Temp.
• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser
• Super high density cell design for extremely low RDS(ON)
   VDSS = 30V
   RDS (ON) = 0.045
   ID = 12A



Specifications

Symbol
Parameter
Max
Unit
ID
Drain Current
12
A
-Continues
-Pulsed
36
VDSS
Drain-Source Voltage
30
V
VGSV
Gate Source Voltage
±20
V
PD
Total Power Dissipation @ TC =25°C
50
W
Derate above 25°C
0.4
W/°C
TJ
Operating and Storage
-65 to 175
°C
TSTG
Temperature Range



Description

The Bay Linear n-channel power field effect transistors 12N035 are produced using high cell density DMOS technology , the 12N035 particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.

The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts




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