Features: * RDS(ON) = 0.7 @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications Symbol PARAMETER Rating Unit VDSS D...
12N70: Features: * RDS(ON) = 0.7 @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Impr...
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Symbol | PARAMETER | Rating | Unit | |
VDSS | Drain-Source Voltage | 700 | V | |
VGSS | Gate-source voltage | ±30 |
V | |
ID | Continuous Drain Current | 12 | A | |
IDM | Pulsed Drain Current (Note 1) | 48 | A | |
EAS | Avalanche Energy | Single Pulsed (Note 2) | 790 | mJ |
EAR | Repetitive (Note 1) | 24 | mJ | |
IAR | Avalanche Current (Note 1) | 12 | A | |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
TJ | Junction Temperature | +150 | ||
TOPR | Operating Temperature | -55 ~ +150 | ||
Tstg | Storage temperatur | -55 ~ +150 |
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
The UTC 12N70 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC's proprietary, planar stripe, DMOS technology.
The 12N70 is suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.