12N70

Features: * RDS(ON) = 0.7 @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications Symbol PARAMETER Rating Unit VDSS D...

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SeekIC No. : 004209158 Detail

12N70: Features: * RDS(ON) = 0.7 @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Impr...

floor Price/Ceiling Price

Part Number:
12N70
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* RDS(ON) = 0.7 @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness



Specifications

Symbol PARAMETER Rating Unit
VDSS Drain-Source Voltage 700 V
VGSS Gate-source voltage ±30
V
ID Continuous Drain Current 12 A
IDM Pulsed Drain Current (Note 1) 48 A
EAS Avalanche Energy Single Pulsed (Note 2) 790 mJ
EAR Repetitive (Note 1) 24 mJ
IAR Avalanche Current (Note 1) 12 A
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
TJ Junction Temperature +150
TOPR Operating Temperature -55 ~ +150
Tstg Storage temperatur -55 ~ +150


Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC 12N70 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC's proprietary, planar stripe, DMOS technology.

The 12N70 is suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.




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