Features: * RDS(ON) = 0.7 @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Specifications
| Characteristic |
Symbol |
Value |
Units |
| Drain-source voltage |
12N60-A
12N60-B |
VDSS |
600
650 |
V |
| Gate-source voltage |
VGSS |
±30 |
V |
| Pulsed Drain Current (Note 1) |
IDM |
48 |
A |
| Continuous Drain Current |
ID |
12 |
A |
| Avalanche Energy |
Single Pulsed (Note 2)
Repetitive (Note 1) |
EAS |
790 |
mJ |
| EAR |
24 |
mJ |
| Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns |
| Junction Temperature |
TJ |
+150 |
|
| Operating Temperature |
TOPR |
- 55 to +150 |
|
| Storage Temperature |
TSTG |
- 55 to +150 |
|
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
DescriptionThe UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC's proprietary,planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.
The 12N60 is the abbreviation of UTC12N60. This device is designed as the 12 amps, 600/650 volts N-channel mosfet which are produced using UTC's proprietary, planar stripe, DMOS technology. It can be used in high efficiency switch mode power supply, and to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.
Features of the 12N60 are:(1)improved dv/dt capability, high ruggedness;(2)avalanche energy specified;(3)fast switching capability;(4)low reverse transfer capacitance (CRSS=typical 25.0 pF);(5)ultra low gate charge (typical 42 nC);(6)RDS(ON)=0.7 @VGS=10 V.
The absolute maximum ratings of the 12N60 can be summarized as:(1)drain-source voltage:600 V;(2)gate-source voltage:±30 V;(3)avalanche current: 12.0 A;(4)continuous drain current (Tc=25°C):12.0 A;(5)continuous drain current (Tc=100°C):12 A;(6)pulsed drain current:48 A;(7)avalanche energy single pulsed:790 mJ;(8)avalanche energy repetitive:24 mJ;(9)peak diode recovery dv/dt:4.5 V/ns;(10)power dissipation:45 W;(11)junction temperature:+150 ;(12)storage temperature:-55 to +150 ;(13)operating temperature:-55 to +150 . If you want to know more information such as the electrical character-istics about the UTC2N60, please download the datasheet in www.seekic.com or www.chinaicmart.com .
12N60 Data Sheet
