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ZNBG3001Q16TA, ZNBG3010, ZNBG3010Q16

Table of contents:
Info of ZNBG3001Q16TA
Info of ZNBG3010
Info of ZNBG3010Q16

ZNBG3001Q16TA, ZNBG3010, ZNBG3010Q16 Selling Leads, Datasheet

MFG:ZETEX Package Cooled:2 D/C:04+

ZNBG3001Q16TA, ZNBG3010, ZNBG3010Q16 Picture

ZNBG3001Q16TA, ZNBG3010, ZNBG3010Q16 Datasheet download

Five Points

Part Number: ZNBG3001Q16TA

MFG: ZETEX

Package Cooled: 2

D/C: 04+

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ZNBG3010 General Description

The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components.

With the addition of two capacitors and a resistor, the devices provide drain voltage and current control for three external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits.

The ZNBG3010/11 includes bias circuits to drive up to three external FETs. A control input to the device selects either one of two FETs as operational, the third FET is permanently active. This feature is particularly used as an LNB polarisation switch.

Drain current setting of the ZNBG3010/11 is user selectable over the range 0 to 15mA, this is achieved with addition of a single resistor. The series also offers the choice of drain voltage to be set for the FETs, the ZNBG3010 gives 2.2 volts drain whilst the ZNBG3011 gives 2 volts.

These devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors. These ensure RF stability and minimal injected noise.

It is possible to use less than the devices full complement of FET bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits.

In order to protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed the range -3.5V to 1V. Furthermore if the negative rail experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will shut down avoiding excessive current flow.

The ZNBG3010/11 are available in QSOP16 for the minimum in device size. Device operating temperature is -40 to 70°C to suit a wide range of environmental conditions.

ZNBG3010 Maximum Ratings

Supply Voltage	-0.6V to 12V
Supply Current	100mA
Input Voltage (V_POL)	25V Continuous
Drain Current (per FET)(set by R_CAL)	0 to 15mA
Output Current	100mA
Operating Temperature	-40 to 70
Storage Temperature	-50 to 85
Power Dissipation (Tamb 25)QSOP16	500mW

ZNBG3010 Features

· Provides bias for GaAs and HEMT FETs
· Drives up to three FETs
· Dynamic FET protection
· Drain current set by external resistor
· Regulated negative rail generator requires only 2 external capacitors
· Choice in drain voltage
· Wide supply voltage range
· Polarisation switch for LNBs
· QSOP surface mount package

ZNBG3010 Typical Application

· Satellite receiver LNBs
· Private mobile radio (PMR)
· Cellular telephones

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