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ZNBG2001, ZNBG2002, ZNBG3000

Table of contents:
Info of ZNBG2001
Info of ZNBG2002
Info of ZNBG3000

ZNBG2001, ZNBG2002, ZNBG3000 Selling Leads, Datasheet

MFG:ZETEX Package Cooled:00+ D/C:SSOP-3.9-16P

ZNBG2001, ZNBG2002, ZNBG3000 Datasheet download

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Part Number: ZNBG2001

MFG: ZETEX

Package Cooled: 00+

D/C: SSOP-3.9-16P

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ZNBG2001 General Description

The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.

With the addition of two capacitors and a resistor the devices provide drain voltage and current control for 2 external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits.

The ZNBG2000/1 contains two bias stages. A single resistor allows FET drain current to be set to the desired level. The series also offers the choice of drain voltage to be set for the FETs, the ZNBG2000 gives 2.2 volts drain whilst the ZNBG2001 gives 2 volts.

These devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors. These ensure RF stability and minimal injected noise.

complement of FET bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits.

In order to protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed the range -3.5V to 0.7V. Furthermore if the negative rail experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will shut down avoiding excessive current flow.

The ZNBG2000/1 are available in MSOP10 packages for the minimum in devices size. Device operating temerature is -40 to 80°C to suit a wide range of environmental conditions.

ZNBG2001 Maximum Ratings

Supply Voltage	-0.6V to 15V
Supply Current	100mA
Drain Current (per FET)(set by R_CAL1 and R_CAL2)	0 to 15mA
Output Current	100mA
Operating Temperature	-40 to 80
Storage Temperature	-40 to 85
Power Dissipation (T_amb 25)MSOP10	500mW

ZNBG2001 Features

• Provides bias for GaAs and HEMT FETs
• Drives up to two FETs
• Dynamic FET protection
• Drain current set by external resistor
• Regulated negative rail generator requires only 2 external capacitors
• Choice in drain voltage
• Wide supply voltage range
• MSOP surface mount package

ZNBG2001 Typical Application

• Satellite receiver LNBs
• Private mobile radio (PMR)
• Single in single out C Band LNB
• Cellular telephones

ZNBG2001 Connection Diagram

ZNBG3000 General Description

The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.

With the addition of two capacitors and a resistor the devices provide drain voltage and current control for 3 external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits.

The ZNBG3000/1 contains three bias stages. A single resistor allows FET drain current to be set to the desired level. The series also offers the choice of drain voltage to be set for the FETs, the ZNBG3000 gives 2.2 volts drain whilst the ZNBG3001 gives 2 volts.

These devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors. These ensure RF stability and minimal injected noise.

It is possible to use less than the devices full complement of FET bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits.

In order to protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed the range -3.5V to 0.7V. Furthermore if the negative rail experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will shut down avoiding excessive current flow.

The ZNBG3000/1 are available in QSOP16 packages for the minimum in devices size. Device operating temperature is -40 to 70°C to suit a wide range of environmental conditions.

ZNBG3000 Maximum Ratings

Part Number	ZNBG3000
LNA Bias Stages	3
Mixer Bias Stages	0
LNA Vdrain (V)	2.2
LNA Idrain (mA)	0 to 15
Iq (mA)	5
VCC (V)	5.0 to 12.0
Vneg (V)	-3.0

ZNBG3000 Features

· Provides bias for GaAs and HEMT FETs
· Drives up to three FETs
· Dynamic FET protection
· Drain current set by external resistor
· Regulated negative rail generator requires only 2 external capacitors
· Choice in drain voltage
· Wide supply voltage range
· QSOP surface mount package

ZNBG3000 Typical Application

· Satellite receiver LNBs
· Private mobile radio (PMR)
· Cellular telephones
· Single in single out C Band LNB

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