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WCMA2064, WCMA4008C1X-GF70, WCMA4016U1X

Table of contents:
Info of WCMA2064
Info of WCMA4008C1X-GF70
Info of WCMA4016U1X

WCMA2064, WCMA4008C1X-GF70, WCMA4016U1X Selling Leads, Datasheet

MFG:Cypress Package Cooled:BGA

WCMA2064, WCMA4008C1X-GF70, WCMA4016U1X Picture

WCMA2064, WCMA4008C1X-GF70, WCMA4016U1X Datasheet download

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Part Number: WCMA2064

MFG: Cypress

Package Cooled: BGA

D/C:

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WCMA4016U1X General Description

The WCMA4016U1X is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. This device features advanced circuit design to provide ultra-low active current and standby current. This is ideal for providing more battery life in portable applications such as cellular telephones.

The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE₁ HIGH or CE₂ LOW or bothBHE andBLE are HIGH). The input/output pins (I/O₀through I/O₁₅) are placed in a high-impedance state when: deselected (CE₁HIGH or CE₂ LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE₁LOW, CE₂ HIGH and WE LOW).

Writing to the device is accomplished by taking Chip Enables (CE₁ LOW and CE₂ HIGH) and Write Enable (WE) input LOW.

If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O₀through I/O₇), is written into the location specified on the address pins (A₀ through A₁₈). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O₈ through I/O₁₅) is written into the location specified on the address pins (A₀ through A₁₈).

Reading from the device is accomplished by taking Chip Enables (CE₁ LOW and CE₂ HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O₀ to I/O₇. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O₈to I/O₁₅. See the truth table at the back of this datasheet for a complete description of read and write modes.

WCMA4016U1X Maximum Ratings

(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature ..............................65°C to +150°C
Ambient Temperature with
Power Applied..........................................55°C to +125°C
Supply Voltage to Ground Potential .............. 0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State^[1] ..................................0.5V to V_CC + 0.5V
DC Input Voltage^[1]............................... −0.5V to V_CC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2100V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA

WCMA4016U1X Features

• Low voltage range: 2.7V3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE₁ and CE₂ and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power

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