Features: • Voltage Range-4.5V5.5V• Low active power-Typical active current: 6 mA @ f = fmax (70 ns speed)• Low standby current• Automatic power-down when deselected• TTL-compatible inputs and outputs• Easy memory expansion with CE1, CE2, and OE features• ...
WCMA1008C1X: Features: • Voltage Range-4.5V5.5V• Low active power-Typical active current: 6 mA @ f = fmax (70 ns speed)• Low standby current• Automatic power-down when deselected• T...
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Features: • High Speed-55ns and 70ns availability• Voltage range-2.7V3.6V• Ultra...
Features: • High Speed-70ns availability• Voltage range-2.7V3.3V• Ultra low acti...
Features: • High Speed-70ns availability• Voltage range-2.7V3.6V• Ultra low acti...
The WCMA1008C1X is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and three-state drivers. WCMA1008C1X has an automatic power-down feature that reduces power consumption by more than 75% when deselected.
Writing to the WCMA1008C1X is accomplished by taking Chip Enable 1 (CE1) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).
Reading from the WCMA1008C1X is accomplished by taking Chip Enable 1 (CE1) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable 2 (CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
The eight input/output pins of WCMA1008C1X (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW, CE2 HIGH, and WE LOW) The WCMA1008C1X is available in a standard 32-pin 450-mil-wide body width SOIC and 32-pin TSOP type I.