WCMA2008U1B

The WCMA2008U1B is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

This WCMA2008U1B is ideal for portable applications. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE₁ HIGH or CE₂ LOW).

Writing to the WCMA2008U1B is accomplished by taking Chip Enable (CE₁) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE₂) HIGH. Data on the eight I/O pins (I/O₀ through I/O₇) is then written into the location specified on the address pins (A0 through A₁₇).

Reading from the WCMA2008U1B is accomplished by taking Chip Enable (CE₁) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable 2 (CE₂) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O₀ through I/O₇) are placed in a high-impedance state when the device is deselected (CE₁ HIGH or CE₂ LOW), the outputs are disabled (OE HIGH), or during a write operation (CE₁ LOW and CE₂ HIGH and WE LOW).

The WCMA2008U1B is available in a 36-ball FBGA packag