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W29EE011T-90B, W29EE012, W29EE01P-90

Table of contents:
Info of W29EE011T-90B
Info of W29EE012
Info of W29EE01P-90

W29EE011T-90B, W29EE012, W29EE01P-90 Selling Leads, Datasheet

MFG:3000 Package Cooled:WINBOND D/C:03+

W29EE011T-90B, W29EE012, W29EE01P-90 Picture

W29EE011T-90B, W29EE012, W29EE01P-90 Datasheet download

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Part Number: W29EE011T-90B

MFG: 3000

Package Cooled: WINBOND

D/C: 03+

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W29EE012 General Description

The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers

W29EE012 Maximum Ratings

PARAMETER	RATING	UNIT
Power Supply Voltage to Vss Potential	-0.5 to +7.0	V
Operating Temperature	0 to +70	°C
Storage Temperature	-65 to +150	°C
D.C. Voltage on Any Pin to Ground Potential Except A9	-0.5 to V_DD +1.0	V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential	-1.0 to V_DD +1.0	V
Voltage on A9 and #OE Pin to Ground Potential	-0.5 to 12.5	V

W29EE012 Features

· Single 5   -volt program and erase operations
· Fast page   -write operations
   - 128 bytes per page
   - Page program cycle: 10 mS (max.)
   - Effective byte   -program cycle time: 39 mS
   - Optional software   -protected data write
· Fast chip   -erase operation: 50 mS
· Page program/erase cycles: 1,000
· Ten   -year data retention
· Software and hardware data protection
· Low power consumption
   - Active current: 25 mA (typ.)
   - Standby current: 20 mA (typ.)
· Automatic program timing with internal VPP generation
· End of program detection
   - Toggle bit
   - Data polling
· Latched address and data
· TTL compatible I/O
· JEDEC standard byte   -wide pinouts

W29EE012 Connection Diagram

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