Features: · Single 5 -volt program and erase operations· Fast page -write operations - 128 bytes per page - Page program cycle: 10 mS (max.) - Effective byte -program cycle time: 39 mS - Software -protected data write· Fast chip -erase operation: 50 mS· Read access time: 150 nS· Page program/erase...
W29C011A: Features: · Single 5 -volt program and erase operations· Fast page -write operations - 128 bytes per page - Page program cycle: 10 mS (max.) - Effective byte -program cycle time: 39 mS - Software -p...
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PARAMETER | RATING | UNIT |
Power Supply Voltage to Vss Potential | -0.5 to +7.0 | V |
Operating Temperature | 0 to +70 | °C |
Storage Temperature | -65 to +150 | °C |
D.C. Voltage on Any Pin to Ground Potential Except A9 | -0.5 to VDD +1.0 | V |
Transient Voltage (<20 nS ) on Any Pin to Ground Potential | -1.0 to VDD +1.0 | V |
Voltage on A9 and OE Pin to Ground Potential | -0.5 to 12.5 | V |
The W29C011A is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C011A results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.