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W29C022

Features: · Single 5-volt write (erase and program) operations· Fast page-write operations - 128 bytes per page - Page write (erase/program) cycle: 10 mS (max.) - Effective byte-write (erase/program) cycle time: 39 mS - Optional software-protected data write· Fast chip-erase operation: 50 mS· Two ...

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SeekIC No. : 004544579 Detail

W29C022: Features: · Single 5-volt write (erase and program) operations· Fast page-write operations - 128 bytes per page - Page write (erase/program) cycle: 10 mS (max.) - Effective byte-write (erase/program...

W29C022 Data Sheet

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Part Number:
W29C022
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

· Single 5-volt write (erase and program) operations
· Fast page-write operations
   - 128 bytes per page
   - Page write (erase/program) cycle: 10 mS (max.)
   - Effective byte-write (erase/program) cycle time: 39 mS
   - Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Two 8 KB boot blocks with lockout
· Typical page write (erase/program) cycles: 1K
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
   - Active current: 25 mA (typ.)
   - Standby current: 20 mA (typ.)
· Automatic write (erase/program) timing with internal VPP generation
· End of write (erase/program) detection
   - Toggle bit
   - Data polling
· Latched address and data
· All inputs and outputs directly TTL compatible
· JEDEC standard byte-wide pinouts


Pinout

Connection Diagram


Specifications

PARAMETER RATING UNIT
Power Supply Voltage to Vss Potential -0.5 to +7.0 V
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +150 °C
D.C. Voltage on Any Pin to Ground Potential Except A9 -0.5 to VDD +1.0 V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V
Voltage on A9 and #OE Pin to Ground Potential -0.5 to 12.5 V



Description

The W29C022 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C022 results in fast write (erase/ program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written (erased and programmed) by using standard EPROM programmers.




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