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The VN808 is the first octal single chip high-side driver developed in VIPower M0-3 technology. Both the control and power stage use N-MOS technology. VN808 has 8 different channels with single protection and diagnostic functions integrated on a single chip. The VN808 has been developed considering the needs of the industrial process control market.
VN808 Features
·High-power capability PowerSO-36; ·Vcc/2 compatible inputs; ·Junction over-temperature protection; ·Case over-temperature protection for thermal independence of the channel; ·Current limitation; ·Shorted load protection; ·Under-voltage shutdown; ·Protection against loss of ground; ·Very low stand-by current; ·Compliance with 6100-4-4 IEC test up to 4.4kV.
The VN808SR is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground.Active current limitation combined with thermal shutdown and automatic restart, protect the device against overload. In overload condition, channel turns OFF and back ON automatically so as to maintain junction temperature between TTSD and TR. If this condition makes case temperature reach TCSD, overloaded channel is turned OFF and and will restart only when case temperature has decreased down to TCR( see waveform 3 Figure 7 on page 10). Non overloaded channels continue to operate normally. Device automatically turns OFF in case of ground pin disconnection. This device is especially suitable for industrial applications conform to IEC 61131
VN808SR Maximum Ratings
Parameter
Symbol
Value
Units
DC supply voltage (Overvoltage protected)
VCC
45
V
Reverse DC supply voltage
VC
0.3
MA
DC reverse ground pin current
-IGND
200
A
DC output current
IOUT
Internally limited
mA
Reverse DC output current
- IOUT
24
mA
DC input current
IIN
+/- 10
mA
DC current sense disable input current
ICSD
DC status current
-ICSENSE
-3/+VCC
°C/W
Electrostatic discharge ( R = 1.5 KΩ; C = 100 pF )
VCSENSE
5000
V
Power dissipation TC = 25 °C
E MAX(1)
Internally limited
W
Junction operating temperature
VESD
Internally limited
°C
Case operating temperature
VESD
Internally Limited
°C
Storage temperature
Tj
-40 to 150
°C
Single-pulse avalanche energy
Tstg
-55 to 150
J
VN808SR Features
VCC/2 compatible input Junction over-temperature protection Case over-temperature protection for thermal independence of the channels Current limitation Shorted load protection Undervoltage shudown Protection against loss of ground Very low stand-by current Compliance to 61000-4-4 IEC test up to 4KV