VF20150S, VF20150SG, VF2017P01 Selling Leads, Datasheet
MFG:Vishay Package Cooled:ITO-220AB D/C:2010+
VF20150S, VF20150SG, VF2017P01 Datasheet download
Part Number: VF20150S
MFG: Vishay
Package Cooled: ITO-220AB
D/C: 2010+
VF20150S, VF20150SG, VF2017P01
- Table of contents:
Info of VF20150S
Info of VF20150SG
Info of VF2017P01
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About VF294H1.54M
PDF/DataSheet Download
Datasheet: VF294H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF294H1.54M
PDF/DataSheet Download
Datasheet: VF294H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF294H1.54M
PDF/DataSheet Download
Datasheet: VF294H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
VF20150S General Description
V20150S, VF20150S & VI20150S datasheet
VF20150S Maximum Ratings
| PARAMETER | SYMBOL | V20150S | VF20150S | VB20150S | VI20150S | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 150 | V | |||
| Maximum average forward rectified current (Fig. 1) |
IF(AV) | 20 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 160 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VF20150S Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF20150S Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection
VF20150SG General Description
V20150SG, VF20150SG, B20150SG & VI20150SG datasheet
VF20150SG Maximum Ratings
| PARAMETER | SYMBOL | V20150SG | VF20150SG | VB20150SG | VI20150SG | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 150 | V | |||
| Maximum average forward rectified current (Fig. 1) |
IF(AV) | 20 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 140 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VF20150SG Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF20150SG Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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