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VF20120SG

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA packag...

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VF20120SG: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C...

VF20120SG Data Sheet

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Part Number:
VF20120SG
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.






Specifications

PARAMETER SYMBOL V20120SG VF20120SG VB20120SG VI20120SG UNIT
Maximum repetitive peak reverse voltage VRRM 120 V
Maximum average forward rectified current (Fig. 1) IF(AV) 20 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode		 IFSM 150 A
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min		 VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 40 to + 150





Description

V20120SG, VF20120SG, VB20120SG & VI20120SG datasheet




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