VF20100S, VF20100SG, VF20120C Selling Leads, Datasheet
MFG:Vishay Package Cooled:ITO-220AB D/C:2010+
VF20100S, VF20100SG, VF20120C Datasheet download
Part Number: VF20100S
MFG: Vishay
Package Cooled: ITO-220AB
D/C: 2010+
VF20100S, VF20100SG, VF20120C
- Table of contents:
Info of VF20100S
Info of VF20100SG
Info of VF20120C
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About VF294H1.54M
PDF/DataSheet Download
Datasheet: VF294H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF294H1.54M
PDF/DataSheet Download
Datasheet: VF294H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF294H1.54M
PDF/DataSheet Download
Datasheet: VF294H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
VF20100S General Description
V20100S, VF20100S, VB20100S & VI20100S datasheet
VF20100S Maximum Ratings
| PARAMETER | SYMBOL |
V20100S |
VF20100S |
VB20100S |
VI20100S |
UNIT |
| Maximum repetitive peak reverse voltage | VRRM |
100 |
V | |||
| Maximum average forward rectified current (Fig. 1) | VF(AV) |
20 |
V | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
250 |
A | |||
| Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min |
VAC |
1500 |
V | |||
| Operating junction and storage temperature range | TJ, TSTJ |
- 40 to + 150 |
||||
VF20100S Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220ABand TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220ABand TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF20100S Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VF20100SG General Description
V20100SG, VF20100SG, VB20100SG & VI20100SG datasheet
VF20100SG Maximum Ratings
|
PARAMETER |
SYMBOL |
V20100SG |
VF20100SG |
VI20100SG |
UNIT |
| Maximum repetitive peak reverse voltage |
VRRM |
100 |
V | ||
| Maximum average forward rectified current |
IF(AV) |
20 |
A | ||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
1500 |
A | ||
| Operating junction and storage temperature range |
TJ,TSTG |
- 40 to + 150 |
|||
VF20100SG Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF20100SG Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VF20120C General Description
V20120C, VF20120C, VB20120C & VI20120C datasheet
VF20120C Maximum Ratings
| PARAMETER | SYMBOL | V20120C | VF20120CS | VB20120C | VI20120C | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 120 | V | |||
| Maximum average forward rectified current (Fig. 1) per device per diode |
IF(AV) | 20 10 |
A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 120 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VF20120C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/E
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/E
VF20120C Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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