UGB8DT, UGB8GT, UGB8HT Selling Leads, Datasheet
MFG:Vishay Package Cooled:gs D/C:2010+
UGB8DT, UGB8GT, UGB8HT Datasheet download
Part Number: UGB8DT
MFG: Vishay
Package Cooled: gs
D/C: 2010+
UGB8DT, UGB8GT, UGB8HT
- Table of contents:
Info of UGB8DT
Info of UGB8GT
Info of UGB8HT
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About UGB8DT
PDF/DataSheet Download
Datasheet: UGB8DT
File Size: 40328 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
About UGB8GT
PDF/DataSheet Download
Datasheet: UGB8GT
File Size: 40031 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
About UGB8HT
PDF/DataSheet Download
Datasheet: UGB8HT
File Size: 40777 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
UGB8DT General Description
UG8AT thru UG8DT datasheet
UGB8DT Maximum Ratings
|
SYMBOLS |
UGB8AT |
UGB8BT |
UGB8CT |
UGB8DT |
UNITS | |
| Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
150 |
200 |
Volts |
| Maximum RMS voltage |
VRWM |
35 |
70 |
105 |
140 |
Volts |
| Maximum DC blocking voltage |
VDC |
50 |
100 |
150 |
200 |
Volts |
| Maximum average forward rectified current at TC=100°C |
I(AV) |
8.0 |
Amps | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) at TC=100°C |
IFSM |
150.0 |
Amps | |||
| Maximum instantaneous forward voltage at: 8.0 20A 5.0A, TJ=150°C |
VF |
1.00 1.20 0.95 |
Volts | |||
| Maximum DC reverse current TC=25°C at rated DC blocking voltage TC=100°C |
IR |
10.0 300.0 |
A | |||
| Maximum reverse recovery time (NOTE 1) |
trr |
20 |
ns | |||
| Maximum reverse recovery time TJ=25°C (NOTE 2) TJ=100°C |
trr |
30.0 50.0 |
ns | |||
| Maximum recovered stored charge TJ=25°C (NOTE 2) TJ=100°C |
Qrr |
20.0 45.0 |
nC | |||
| Typical junction capacitance (NOTE 3) |
CJ |
45.0 |
pF | |||
| Typical thermal resistance (NOTE 4) |
RJC |
4.0 |
°C/W | |||
| Operating junction and storage temperature range |
TJ, TSTG |
-55to+150 |
°C | |||
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/ms, Irr=10% IRM for meaurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
UGB8DT Features
·Plastic package has Underwriters Laboratories Flammability Classification 94V-0
·Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode
·Ultrafast reverse recovery time for high efficiency
·Soft recovery characteristics
·Excellent high temperature switching
·Glass passivated chip junction
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
·Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode
·Ultrafast reverse recovery time for high efficiency
·Soft recovery characteristics
·Excellent high temperature switching
·Glass passivated chip junction
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
UGB8GT Maximum Ratings
|
SYMBOLS |
UGB8FT |
UGB8GT |
UNITS | |
| Maximum repetitive peak reverse voltage |
VRRM |
300 |
400 |
Volts |
| Working peak reverse voltage |
VRWM |
225 |
300 |
Volts |
| Maximum RMS voltage |
VRMS |
210 |
280 |
Volts |
| Maximum DC blocking voltage |
VDC |
300 |
400 |
Volts |
| Maximum average forward rectified current at TC=100°C |
I(AV) |
8.0 |
Amps | |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100.0 |
Amps | |
| Maximum instantaneous forward voltage at TJ=25°C TJ=150°C |
VF |
1.30 1.00 |
Volls | |
| Maximum reverse leakage current TC=25°C at working peak reverse voltage TC=100°C |
IR |
10 350 |
A | |
| Reverse recovery time at Maximum IF=1.0A, di/dt=100A/ms, VR=30V, Irr=0.1 IRM |
trr |
50 |
ns | |
| Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A |
trr |
35 |
ns | |
| Maximum reverse recovery current per leg at IF=10A, di/dt=50A/ms,VR=30V Tc=100 |
IRM |
5.5 |
Amps | |
| Maximum stored charge IF=2A, di/dt=20A/ms, VR=30V, Irr=0.1 IRM |
Qrr |
55 |
nC | |
| Typical thermal resistance from junction to case |
RQJC |
2.2 |
°C/W | |
| Operating junction and storage temperature range |
TJ, TSTG |
-40 to +150 |
°C | |
UGB8GT Features
·Plastic package has Underwriters Laboratories Flammability Classification 94V-0
·Ideally suited for freewheeling diode power factor correction applications
·Soft recovery characteristics
·Excellent high temperature switching
·Optimized to reduce switching losses
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
·Glass passivated chip junction
·Ideally suited for freewheeling diode power factor correction applications
·Soft recovery characteristics
·Excellent high temperature switching
·Optimized to reduce switching losses
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
·Glass passivated chip junction
UGB8HT General Description
UG8HT thru UG8JT datasheet
UGB8HT Maximum Ratings
|
SYMBOLS |
UGF8FT |
UGF8GT |
UNITS | |
| Maximum repetitive peak reverse voltage |
VRRM |
500 |
600 |
Volts |
| Working peak reverse voltage |
VRWM |
400 |
480 |
Volts |
| Maximum RMS voltage |
VRMS |
350 |
420 |
Volts |
| Maximum DC blocking voltage |
VDC |
500 |
600 |
Volts |
| Maximum average forward rectified current at TC=100°C |
I(AV) |
8.0 |
Amps | |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100.0 |
Amps | |
| Maximum instantaneous forward voltage per leg TJ=25°C TJ=150°C |
VF |
1.75 1.50 |
Volts | |
| Maximum reverse leakage current TC=25°C at working peak reverse voltage TC=100°C TC=125°C |
IR |
30.0 800.0 4.0 |
A A mA | |
| Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A |
trr |
25 |
ns | |
| Reverse recovery time at Maximum IF=1.0A, di/dt=50A/ms, VR=30V, Irr=0.1 IRM Typical |
trr |
50 35 |
ns | |
| Maximum reverse recovery current at IF=8.0A, di/dt=64A/s,VR=400V |
S |
1.0 |
- | |
| Maximum reverse recovery current at IF=8.0A, di/dt=64A/ms,VR=400V TC=125°C |
IRM |
5.5 |
Amps | |
| Typical reverse recovery current at IF=8.0A, di/dt=240A/ms, VR=400V TC=125°C |
IRM |
10.0 |
Amps | |
| Peak forward recovery time at Maximum IF=8A, di/dt=64A/ms measured at 1.1 VF Typical |
tfr |
500 250 |
ns | |
| Typical thermal resistance from junction to case | RQJC |
2.0 |
°C/W | |
| Operating junction and storage temperature range | TJ, TSTG |
-55to+150 |
°C | |
UGB8HT Features
·Plastic package has Underwriters Laboratories Flammability Classification 94V-0
·Ideally suited for freewheeling diode power factor correction applications
·Soft recovery characteristics
·Excellent high temperature switching
·Planar technology
·Optimized to reduce switching losses
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
·Ideally suited for freewheeling diode power factor correction applications
·Soft recovery characteristics
·Excellent high temperature switching
·Planar technology
·Optimized to reduce switching losses
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
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