MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-263AB D/C:2010+
UGB5JT, UGB6124AG, UGB8FT Datasheet download
Category: Discrete Semiconductor Products
MFG: IXYS
Package Cooled: TO-263AB
D/C: 2010+
Description: IC MOD DIODE 1PHASE BRIDGE UGB1
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PDF/DataSheet Download
Datasheet: UGB5JT
File Size: 45537 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UGB6124AG
File Size: 254056 KB
Manufacturer: IXYS [IXYS Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UGB8FT
File Size: 40031 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
| Parameter |
Symbol |
UG5HT |
UG5JT |
Unit |
| Maximum repetitive peak reverse voltage |
VRRM |
500 |
600 |
V |
| Maximum working reverse voltage |
VRWM |
400 |
480 |
V |
| Maximum RMS voltage |
VRMS |
350 |
420 |
V |
| Maximum DC blocking voltage |
VDC |
500 |
600 |
V |
| Maximum average forward rectified current |
IF(AV) |
5.0 |
A | |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) at TC = 100°C |
IFSM |
65 |
A | |
| Operating junction and storage temperature range |
TJ, TSTG |
-55 to+150 |
°C | |
| RMS Isolation voltage (UGF types only) from terminals to heatsink with t = 1.0 second, RH 30% |
VISOL |
4500(1) 3500(2) 1500(3) |
V | |
| Technical/Catalog Information | UGB6124AG |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Diode Type | Single Phase |
| Package / Case | UGB-1 |
| Packaging | Bulk |
| Reverse Recovery Time (trr) | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - DC Forward (If) | 1A |
| Voltage - Peak Reverse (Max) | 10500V |
| Mounting Type | PCB |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | UGB6124AG UGB6124AG |
|
SYMBOLS |
UGB8FT |
UGB8GT |
UNITS | |
| Maximum repetitive peak reverse voltage |
VRRM |
300 |
400 |
Volts |
| Working peak reverse voltage |
VRWM |
225 |
300 |
Volts |
| Maximum RMS voltage |
VRMS |
210 |
280 |
Volts |
| Maximum DC blocking voltage |
VDC |
300 |
400 |
Volts |
| Maximum average forward rectified current at TC=100°C |
I(AV) |
8.0 |
Amps | |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100.0 |
Amps | |
| Maximum instantaneous forward voltage at TJ=25°C TJ=150°C |
VF |
1.30 1.00 |
Volls | |
| Maximum reverse leakage current TC=25°C at working peak reverse voltage TC=100°C |
IR |
10 350 |
A | |
| Reverse recovery time at Maximum IF=1.0A, di/dt=100A/ms, VR=30V, Irr=0.1 IRM |
trr |
50 |
ns | |
| Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A |
trr |
35 |
ns | |
| Maximum reverse recovery current per leg at IF=10A, di/dt=50A/ms,VR=30V Tc=100 |
IRM |
5.5 |
Amps | |
| Maximum stored charge IF=2A, di/dt=20A/ms, VR=30V, Irr=0.1 IRM |
Qrr |
55 |
nC | |
| Typical thermal resistance from junction to case |
RQJC |
2.2 |
°C/W | |
| Operating junction and storage temperature range |
TJ, TSTG |
-40 to +150 |
°C | |
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