UGB8AT, UGB8BT, UGB8CT Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-263AB D/C:2010+
UGB8AT, UGB8BT, UGB8CT Datasheet download
Part Number: UGB8AT
MFG: Vishay
Package Cooled: TO-263AB
D/C: 2010+
MFG:Vishay Package Cooled:TO-263AB D/C:2010+
UGB8AT, UGB8BT, UGB8CT Datasheet download
MFG: Vishay
Package Cooled: TO-263AB
D/C: 2010+
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PDF/DataSheet Download
Datasheet: UGB8AT
File Size: 40328 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UGB8BT
File Size: 40328 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UGB8CT
File Size: 40328 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
SYMBOLS |
UGB8AT |
UGB8BT |
UGB8CT |
UGB8DT |
UNITS | |
Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
150 |
200 |
Volts |
Maximum RMS voltage |
VRWM |
35 |
70 |
105 |
140 |
Volts |
Maximum DC blocking voltage |
VDC |
50 |
100 |
150 |
200 |
Volts |
Maximum average forward rectified current at TC=100°C |
I(AV) |
8.0 |
Amps | |||
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) at TC=100°C |
IFSM |
150.0 |
Amps | |||
Maximum instantaneous forward voltage at: 8.0 20A 5.0A, TJ=150°C |
VF |
1.00 1.20 0.95 |
Volts | |||
Maximum DC reverse current TC=25°C at rated DC blocking voltage TC=100°C |
IR |
10.0 300.0 |
A | |||
Maximum reverse recovery time (NOTE 1) |
trr |
20 |
ns | |||
Maximum reverse recovery time TJ=25°C (NOTE 2) TJ=100°C |
trr |
30.0 50.0 |
ns | |||
Maximum recovered stored charge TJ=25°C (NOTE 2) TJ=100°C |
Qrr |
20.0 45.0 |
nC | |||
Typical junction capacitance (NOTE 3) |
CJ |
45.0 |
pF | |||
Typical thermal resistance (NOTE 4) |
RJC |
4.0 |
°C/W | |||
Operating junction and storage temperature range |
TJ, TSTG |
-55to+150 |
°C |