UG8DT, UG8DT45, UG8FT Selling Leads, Datasheet
MFG:VISHAY Package Cooled:TO-220 D/C:0036+
UG8DT, UG8DT45, UG8FT Datasheet download
Part Number: UG8DT
MFG: VISHAY
Package Cooled: TO-220
D/C: 0036+
MFG:VISHAY Package Cooled:TO-220 D/C:0036+
UG8DT, UG8DT45, UG8FT Datasheet download
MFG: VISHAY
Package Cooled: TO-220
D/C: 0036+
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Datasheet: UG8DT
File Size: 42821 KB
Manufacturer: GE [General Semiconductor]
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PDF/DataSheet Download
Datasheet: UG835A6SA
File Size: 167994 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: UG8FT
File Size: 38686 KB
Manufacturer: GE [General Semiconductor]
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SYMBOLS |
UG8FT |
UG8GT |
UNITS | |
Maximum repetitive peak reverse voltage |
VRRM |
300 |
400 |
Volts |
Maximum RMS voltage |
VRMS |
210 |
280 |
Volts |
Maximum DC blocking voltage |
VDC |
300 |
400 |
Volts |
Maximum average forward rectified current at TC=100°C |
I(AV) |
Amps | ||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)at Tc=100°C |
IFSM |
8.0 |
Amps | |
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) at TC=100°C |
VF |
150.0 |
Volts | |
Maximum instantaneous forward voltage at 8.0 20A 5.0A, TJ=150°C |
IR |
1.00 1.20 0.95 |
A | |
Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=100°C |
trr |
10 300 |
ns | |
Maximum reverse recovery time (NOTE 1) |
trr |
20.0 |
ns | |
Maximum reverse recovery time TJ=25°C (NOTE 2) TJ=100°C |
IRM |
30.0 50 |
Amps | |
Maximum recovered stored charge TJ=25°C (NOTE 2) TJ=100°C |
Qrr |
20.0 45.0 |
nC | |
Typical junction capacitance (NOTE 3) |
CJ |
45.0 |
pF | |
Typical thermal resistance(NOTE4) |
RQJC |
4.0 |
°C/W | |
Operating junction and storage temperature range |
TJ, TSTG |
-55to+150 |
°C |
SYMBOLS |
UG8FT |
UG8GT |
UNITS | |
Maximum repetitive peak reverse voltage |
VRRM |
300 |
400 |
Volts |
Working peak reverse voltage |
VRWM |
225 |
300 |
Volts |
Maximum RMS voltage |
VRMS |
210 |
280 |
Volts |
Maximum DC blocking voltage |
VDC |
300 |
400 |
Volts |
Maximum average forward rectified current at TC=100°C |
I(AV) |
8.0 |
Amps | |
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100.0 |
Amps | |
Maximum instantaneous forward voltage at IF= 8A (NOTE 1) TJ=25°C TJ=150°C |
VF |
1.30 1.00 |
Volts | |
Maximum reverse leakage current TC=25°C at working peak reverse voltage TC=100°C |
IR |
10 350 |
A | |
Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A |
trr |
35 |
ns | |
MaximumReverse recovery time at IF=1.0A, di/dt=100A/ms, VR=30V, Irr=0.1 IRM |
trr |
50 |
ns | |
Maximum reverse recovery current at IF=10A, di/dt=50A/ms,VR=30V TC=100°C |
IRM |
5.5 |
Amps | |
Maximum stored charge IF=2A, di/dt=20A/ms, VR=30V, Irr=0.1 IRM |
Qrr |
55 |
nC | |
Typical thermal resistance from junction to case |
RQJC |
2.2 |
°C/W | |
Operating junction and storage temperature range |
TJ, TSTG |
-40to+150 |
°C |