MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+
TIP105, TIP105TU, TIP106 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: TO-220
D/C: 06+
Description: TRANS BIPO PNP 8A 80V TO-220AB
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PDF/DataSheet Download
Datasheet: TIP105
File Size: 26689 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIP100
File Size: 224249 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIP106
File Size: 781638 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
| Technical/Catalog Information | TIP105 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 8A |
| Power - Max | 80W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 6mA, 3A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 50A |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TIP105 TIP105 497 2536 5 ND 49725365ND 497-2536-5 |
|
Collector-base voltage (open emitter) |
VCBO |
max. |
60 |
80 |
100 |
V |
|
Collector-emitter voltage (open base) |
VCEO |
max. |
60 |
80 |
100 |
V |
|
Collector current |
IC |
max. |
8.0 |
A | ||
|
Total power dissipation up to TC = 25°C |
Ptot |
max. |
80 |
W | ||
|
Junction temperature |
Tj |
max. |
150 |
°C | ||
|
Collector-emitter saturation voltage IC = 3 A; IB = 6 mA |
VCEsat |
max. |
2.0 |
v | ||
|
D.C. current gain IC = 3 A; VCE = 4 V |
hFE |
min. |
1.0 |
k | ||
|
max. |
20 |
k |
|
Collector-base voltage (open emitter) |
VCBO |
max. |
60 |
80 |
100 |
V |
|
Collector-emitter voltage (open base) |
VCEO |
max. |
60 |
80 |
100 |
V |
|
Emitter-base voltage (open collector) |
VEBO |
max. |
5.0 |
V | ||
|
Collector current |
IC |
max. |
8.0 |
A | ||
|
Collector peak current |
ICM |
max. |
15 |
A | ||
|
Base current |
IB |
max. |
1.0 |
A | ||
|
Total power dissipation up to TC = 25°C |
Ptot |
max. |
80 |
W | ||
|
Derate above 25°C |
max. |
0.64 |
W/°C | |||
|
Total power dissipation up to TA = 25°C |
Ptot |
max. |
2.0 |
W | ||
|
Derate above 25°C |
max. |
0.016 |
W/°C | |||
|
Junction temperature |
Tj |
max. |
150 |
°C | ||
|
Storage temperature |
Tstg |
65 to +150 |
°C |
| Technical/Catalog Information | TIP105TU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 8A |
| Power - Max | 80W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 6mA, 3A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 50A |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TIP105TU TIP105TU |
| Technical/Catalog Information | TIP106 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 8A |
| Power - Max | 80W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 6mA, 3A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 50A |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | TIP106 TIP106 TIP106OS ND TIP106OSND TIP106OS |
|
Collector-base voltage (open emitter) |
VCBO |
max. |
60 |
80 |
100 |
V |
|
Collector-emitter voltage (open base) |
VCEO |
max. |
60 |
80 |
100 |
V |
|
Collector current |
IC |
max. |
8.0 |
A | ||
|
Total power dissipation up to TC = 25°C |
Ptot |
max. |
80 |
W | ||
|
Junction temperature |
Tj |
max. |
150 |
°C | ||
|
Collector-emitter saturation voltage IC = 3 A; IB = 6 mA |
VCEsat |
max. |
2.0 |
v | ||
|
D.C. current gain IC = 3 A; VCE = 4 V |
hFE |
min. |
1.0 |
k | ||
|
max. |
20 |
k |
|
Collector-base voltage (open emitter) |
VCBO |
max. |
60 |
80 |
100 |
V |
|
Collector-emitter voltage (open base) |
VCEO |
max. |
60 |
80 |
100 |
V |
|
Emitter-base voltage (open collector) |
VEBO |
max. |
5.0 |
V | ||
|
Collector current |
IC |
max. |
8.0 |
A | ||
|
Collector peak current |
ICM |
max. |
15 |
A | ||
|
Base current |
IB |
max. |
1.0 |
A | ||
|
Total power dissipation up to TC = 25°C |
Ptot |
max. |
80 |
W | ||
|
Derate above 25°C |
max. |
0.64 |
W/°C | |||
|
Total power dissipation up to TA = 25°C |
Ptot |
max. |
2.0 |
W | ||
|
Derate above 25°C |
max. |
0.016 |
W/°C | |||
|
Junction temperature |
Tj |
max. |
150 |
°C | ||
|
Storage temperature |
Tstg |
65 to +150 |
°C |
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