MFG:TOSHIBA Package Cooled:TOSHIBA D/C:N/A
TH50VSF2682BFSB, TH50VSF3580AASB, TH50VSF3583AASB Datasheet download
MFG: TOSHIBA
Package Cooled: TOSHIBA
D/C: N/A
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PDF/DataSheet Download
Datasheet: TH50VSF1480
File Size: 1194112 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TH50VSF1480
File Size: 1194112 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TH50VSF3583AASB
File Size: 561575 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a33,554,432-bit flash memory. The CIOS andCIOF inputs can be used to select the optimal memory configuration.The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Writeor Erase operation. The TH50VSF3582/3583AASB can range from 2.67 V to 3.3 V. The TH50VSF3582/3583AASB isavailable in a 69-pin BGA package, making it suitable for a variety of design applications.
| SYMBOL | PARAMETER | RANGE | UNIT |
| VCC | VCCs/VCCf Supply Voltage | −0.3~4.2 | V |
| VIN | Input Voltage(1) | −0.3~4.2 | V |
| VDQ | Input/Output Voltage | −0.5~VCC + 0.5 ( 4.2) | V |
| Topr | Operating Temperature | −20~85 | °C |
| PD | Power Dissipation | 0.6 | W |
| Tsolder | Soldering Temperature (10 s) | 260 | °C |
| IOSHORT | Output Short Circuit Current(2) | 100 | mA |
| NEW | Erase/Program Cycling Capability | 100,000 | Cycle |
| Tstg | Storage Temperature | −55~125 | °C |
• Power supply voltageVCCs = 2.67 V~3.3 VVCCf = 2.67 V~3.3 V
• Data retention supply voltageVCCs = 1.5 V~3.3 V
• Current consumptionOperating: 45 mA maximum (CMOS level)Standby: 10 A maximum (SRAM CMOS level)Standby: 10 A maximum (FLASH)
• Block erase architecture for flash memory8 * 8 Kbytes63 * 64 Kbytes
• Function mode control for flash memoryCompatible with JEDEC-standard commands
• Flash memory functionsSimultaneous Read/Write operationsAuto-ProgramAuto Chip Erase, Auto Block EraseAuto Multiple-Block EraseProgram Suspend/ResumeBlock-Erase Suspend/ResumeData Polling/Toggle Bit functionBlock Protection/Boot Block ProtectionAutomatic Sleep, Hidden ROM Area SupportsCommon Flash Memory Interface (CFI)Byte/Word Mode
• Erase and Program cycle for flash memory105 cycles (typical)
• Boot block architecture for flash memoryTH50VSF3582AASB: Top boot blockTH50VSF3583AASB: Bottom boot block
• PackageP-FBGA69-1209-0.80A3: 0.31 g (typ.)
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