MFG:BGA8*17 Package Cooled:1360 D/C:TOS
TH50VSF1421ACXB, TH50VSF1480AASB(EL), TH50VSF2581AASB Datasheet download
MFG: BGA8*17
Package Cooled: 1360
D/C: TOS
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PDF/DataSheet Download
Datasheet: TH50VSF1480
File Size: 1194112 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TH50VSF1480
File Size: 1194112 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TH50VSF2581AASB
File Size: 559829 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply for the TH50VSF2580/2581AASB can range from 2.7 V to 3.6 V. The TH50VSF2580/2581AASB can perform simultaneous read/write operations on its flash memory and is available in a 69-pin BGA package, making it suitable for a variety of applications.
| SYMBOL | PARAMETER | RANGE | UNIT |
| VCC | VCCs/VCCf Supply Voltage | −0.3~4.6 | V |
| VIN | Input Voltage(1) | −0.3~4.6 | V |
| VDQ | Input/Output Voltage | −0.5~VCC + 0.5 ( 4.6) | V |
| Topr | Operating Temperature | -40~85 | °C |
| PD | Power Dissipation | 0.6 | W |
| Tsolder | Soldering Temperature (10s) | 260 | °C |
| IOSHORT | Output Short Circuit Current(2) | 100 | mA |
| NEW | Erase/Program Cycling Capability | 100,000 | Cycles |
| Tstg | Storage Temperature | −55~125 | °C |
• Power supply voltage
VCCs = 2.7 V~3.6 V
VCCf = 2.7 V~3.6 V
• Data retention supply voltage
VCCs = 1.5 V~3.6 V
• Current consumption
Operating: 45 mA maximum (CMOS level)
Standby: 7 A maximum (SRAM CMOS level)
Standby: 10 A maximum (flash CMOS level)
• Block erase architecture for flash memory
8 blocks of 8 Kbytes
63 blocks of 64 Kbytes
• Organization
• Function mode control for flash memory
Compatible with JEDEC-standard commands
• Flash memory functions
Simultaneous Read/Write operations
Auto-Program
Auto Chip Erase, Auto Block Erase
Auto Multiple-Block Erase
Program Suspend/Resume
Block-Erase Suspend/Resume
Data Polling / Toggle Bit function
Block Protection / Boot Block Protection
Support for automatic sleep and hidden ROM area
Common flash memory interface (CFI)
Byte/Word Modes
• Erase and Program cycles for flash memory
105 cycles (typical)
• Boot block architecture for flash memory
TH50VSF2580AASB: Top boot block
TH50VSF2581AASB: Bottom boot block
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