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TH50VSF3681AASB

Features: • Power supply voltageVCCs = 2.7 V~3.3 VVCCf = 2.7 V~3.3 V• Data retention supply voltageVCCs = 1.5 V~3.3 V• Current consumptionOperating: 45 mA maximum (CMOS level)Standby: 10 A maximum (SRAM CMOS level)Standby: 10 A maximum (FLASH)• Block erase architecture for ...

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TH50VSF3681AASB: Features: • Power supply voltageVCCs = 2.7 V~3.3 VVCCf = 2.7 V~3.3 V• Data retention supply voltageVCCs = 1.5 V~3.3 V• Current consumptionOperating: 45 mA maximum (CMOS level)Stand...

TH50VSF3681AASB Data Sheet

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Part Number:
TH50VSF3681AASB
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Power supply voltageVCCs = 2.7 V~3.3 VVCCf = 2.7 V~3.3 V
• Data retention supply voltageVCCs = 1.5 V~3.3 V
• Current consumptionOperating: 45 mA maximum (CMOS level)Standby: 10 A maximum (SRAM CMOS level)Standby: 10 A maximum (FLASH)
• Block erase architecture for flash memory8 * 8 Kbytes63 * 64 Kbytes


Specifications

SYMBOL PARAMETER RANGE UNIT
VCC VCCs/VCCf Supply Voltage −0.3~4.2 V
VIN Input Voltage(1) −0.3~4.2 V
VDQ Input/Output Voltage −0.5~VCC + 0.5 ( 4.2) V
Topr Operating Temperature −20~85 °C
PD Power Dissipation 0.6 W
Tsolder Soldering Temperature (10 s) 260 °C
IOSHORT Output Short Circuit Current(2) 100 mA
NEW Erase/Program Cycling Capability 100,000 Cycle
Tstg Storage Temperature −55~125 °C



Description

The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Writeor Erase operation. The TH50VSF3680/3681AASB can range from 2.7 V to 3.3 V. The TH50VSF3680/3681AASB isavailable in a 69-pin BGA package, making it suitable for a variety of design applications.




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