Features: • Power supply voltageVCCs = 2.7 V~3.3 VVCCf = 2.7 V~3.3 V• Data retention supply voltageVCCs = 1.5 V~3.3 V• Current consumptionOperating: 45 mA maximum (CMOS level)Standby: 10 A maximum (SRAM CMOS level)Standby: 10 A maximum (FLASH)• Block erase architecture for ...
TH50VSF3681AASB: Features: • Power supply voltageVCCs = 2.7 V~3.3 VVCCf = 2.7 V~3.3 V• Data retention supply voltageVCCs = 1.5 V~3.3 V• Current consumptionOperating: 45 mA maximum (CMOS level)Stand...
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Features: • Power supply voltage VCCs = 2.7 V~3.6 V VCCf = 2.7 V~3.6 V• Data retention...
Features: • Power supply voltage VCCs = 2.7 V~3.6 V VCCf = 2.7 V~3.6 V• Data retention...
SYMBOL | PARAMETER | RANGE | UNIT |
VCC | VCCs/VCCf Supply Voltage | −0.3~4.2 | V |
VIN | Input Voltage(1) | −0.3~4.2 | V |
VDQ | Input/Output Voltage | −0.5~VCC + 0.5 ( 4.2) | V |
Topr | Operating Temperature | −20~85 | °C |
PD | Power Dissipation | 0.6 | W |
Tsolder | Soldering Temperature (10 s) | 260 | °C |
IOSHORT | Output Short Circuit Current(2) | 100 | mA |
NEW | Erase/Program Cycling Capability | 100,000 | Cycle |
Tstg | Storage Temperature | −55~125 | °C |
The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Writeor Erase operation. The TH50VSF3680/3681AASB can range from 2.7 V to 3.3 V. The TH50VSF3680/3681AASB isavailable in a 69-pin BGA package, making it suitable for a variety of design applications.