Features: ·Highly reliable Hall Effect device·Compact and light weight·Fast response time·Excellent linearity of the output voltage over a wide input range·Excellent frequency response (> 50 kHz)·Low power consumption (12 mA nominal)·Capable of measuring both DC and AC, both pulsed and mixed·Hi...
TH50A: Features: ·Highly reliable Hall Effect device·Compact and light weight·Fast response time·Excellent linearity of the output voltage over a wide input range·Excellent frequency response (> 50 kHz)...
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Features: SpecificationsDescriptionThe TH50VSF1480AASB is a package of mixed 2,097,152-bit Full CM...
Features: • Power supply voltage VCCs = 2.7 V~3.6 V VCCf = 2.7 V~3.6 V• Data retention...
Parameter |
Symbol |
Unit |
TH3A .. TH50A |
TH3A-B12 .. TH50A-B12 |
Nominal Input Current |
Ifn |
ADC |
3 .. 50 | |
Linear Range |
Ifs |
ADC |
±9 .. ±150 = 3x Ifn |
±7.2 .. ±120 = 2.4x Ifn |
Nominal Output Voltage |
Vhn |
V |
4 V±1% at If=Ifn ( RL=10k) | |
Offset Voltage |
Vos |
mV |
Within ±40 mV @ If=0, Ta=25 | |
Output Resistance |
ROUT |
<100 | ||
Hysteresis Error |
Voh |
mV |
Within ±15 mV @ If=Ifn0 | |
Supply Voltage |
VCC/VEE |
V |
±15V ±5% |
±12V ±5% |
Linearity |
P |
% |
Within ±1% of Ifn | |
Consumption Current |
ICC |
mA |
±12 mA nominal, ±16 mA max | |
Response Time (90%Vhn) |
Tr |
sec |
5sec max. @ d If /dt = Ifn /sec | |
Frequency bandwidth (-3dB) |
fBW |
Hz |
DC to 50kHz | |
Thermal Drift of Output |
- |
%/ |
Within ±0.1 %/ @ Ifn | |
Thermal Drift of Zero Current Offset |
- |
mV/ |
Within ±0.1 %/ @ Ifn | |
Dielectric Strength |
- |
V |
AC2.5KV X 60 sec | |
Isolation Resistance @ 1000 VDC |
RIS |
M |
>1000 M | |
Operating Temperature |
Ta |
-15 to 80 | ||
Storage Temperature |
Ts |
-20 to 85 | ||
Mass |
W |
g |
10 g |