TH50VSF2580AASB

• Power supply voltage
   VCCs = 2.7 V~3.6 V
   VCCf = 2.7 V~3.6 V
• Data retention supply voltage
   VCCs = 1.5 V~3.6 V
• Current consumption
   Operating: 45 mA maximum (CMOS level)
   Standby: 7 A maximum (SRAM CMOS level)
   Standby: 10 A maximum (flash CMOS level)
• Block erase architecture for flash memory
   8 blocks of 8 Kbytes
   63 blocks of 64 Kbytes
• Organization
• Function mode control for flash memory
   Compatible with JEDEC-standard commands
• Flash memory functions
   Simultaneous Read/Write operations
   Auto-Program
   Auto Chip Erase, Auto Block Erase
   Auto Multiple-Block Erase
   Program Suspend/Resume
   Block-Erase Suspend/Resume
   Data Polling / Toggle Bit function
   Block Protection / Boot Block Protection
   Support for automatic sleep and hidden ROM area
   Common flash memory interface (CFI)
   Byte/Word Modes
• Erase and Program cycles for flash memory
   105 cycles (typical)
• Boot block architecture for flash memory
   TH50VSF2580AASB: Top boot block
   TH50VSF2581AASB: Bottom boot block
• Package
   P-FBGA69-1209-0.80A3: 0.31 g (typ.)

The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply for the TH50VSF2580/2581AASB can range from 2.7 V to 3.6 V. The TH50VSF2580/2581AASB can perform simultaneous read/write operations on its flash memory and is available in a 69-pin BGA package, making it suitable for a variety of applications.